OptiMOS™ Power-Transistor
Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up ...
OptiMOS™ Power-
Transistor
Features N-channel Logic Level - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (lead free) Ultra low Rds(on) 100% Avalanche tested
IPB80N08S2L-07 IPP80N08S2L-07
Product Summary V DS R DS(on),max (SMD version) ID
75 V 6.8 mW 80 A
PG-TO263-3-2
PG-TO220-3-1
Type IPB80N08S2L-07 IPP80N08S2L-07
Package
Ordering Code Marking
PG-TO263-3-2 SP0002-19051 2N08L07
PG-TO220-3-1 SP0002-19050 2N08L07
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V1)
T C=100 °C, V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse2) E AS I D=80A
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
80
80
320 810 ±20 300 -55 ... +175 55/175/56
Unit A
mJ V W °C
Rev. 1.1
page 1
2014-03-07
Parameter
Symbol
Conditions
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction ambient, leaded
R thJA
SMD version, device on PCB
R thJA
minimal footprint 6 cm2 cooling area3)
IPB80N08S2L-07 IPP80N08S2L-07
min.
Values typ.
Unit max.
- - 0.5 K/W - - 62 - - 62 - - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 m...
