OptiMOS® Power-Transistor
Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C pea...
OptiMOS® Power-
Transistor
Features N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (lead free) Ultra low Rds(on) 100% Avalanche tested
IPB77N06S2-12 IPP77N06S2-12
Product Summary V DS R DS(on),max (SMD version) ID
55 V 11.7 mΩ 77 A
PG-TO263-3-2
PG-TO220-3-1
Type IPB77N06S2-12 IPP77N06S2-12
Package PG-TO263-3-2 PG-TO220-3-1
Ordering Code Marking SP0002-18173 2N0612 SP0002-18172 2N0612
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100 °C, V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse2) E AS I D= 77 A
Gate source voltage4)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value 77
56
308 280 ±20 158 -55 ... +175 55/175/56
Unit A
mJ V W °C
R...