IPI70P04P4-09

OptiMOS®-P2 Power-Transistor Features P-channel - Normal Level - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (RoHS compliant) 100% Avalanche tested IPB70P04P4-09 IPI70P04P4-09, IPP70P04P4-09 Product Summary V DS R DS(on) (SMD Version) ID -40 V 9.1 mW -70 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB70P04P4-09 IPI70P04P4-09 IPP70P04P4-09 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4P0409 4P0409 4P0409 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) ID T C=25°C, V GS=-10V T C=100°C, V GS=-10V Pulsed drain current2) Avalanche energy, single pulse Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature I D,pulse T C=25°C E AS I D=-36A I AS - V GS - P tot T C=25 °C T j, T stg - IEC climatic category; DIN IEC 68-1 - - Rev. 1.3 page 1 Value -72 -50 -288 24 -72 ±20 75 -55 ... +175 55/175/56 Unit A mJ A V W °C 2011-02-14 IPB70P04P4-09 IPI70P04P4-09, IPP70P04P4-09 Parameter Symbol Conditions min. Values typ. Unit max. Thermal characteristics2) Thermal resistance, junction - case R thJC Thermal resistance, junction ambient, leaded R thJA - - - 2 K/W - - 62 SMD version, device on PCB R thJA minimal footprint 6 cm2 cooling area2) - - 62 - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source ...