IPI70N10S3-12

OptiMOS®-T Power-Transistor Features N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant) 100% Avalanche tested IPB70N10S3-12 IPI70N10S3-12, IPP70N10S3-12 Product Summary V DS R DS(on),max (SMD version) ID 100 V 11.3 mΩ 70 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB70N10S3-12 IPI70N10S3-12 IPP70N10S3-12 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 3N1012 3N1012 3N1012 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current1) I D,pulse T C=25 °C Avalanche energy, single pulse1) E AS I D=35A Avalanche current, single pulse I AS Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value 70 48 280 410 70 ±20 125 -55 ... +175 55/175/56 Unit A mJ A V W °C Rev. 1.0 page 1 2008-02-12 IPB70N10S3-12 IPI70N10S3-12, IPP70N10S3-12 Parameter Symbol Conditions min. Values typ. Unit max. Thermal characteristics1) Thermal resistance, junction - case R thJC Thermal resistance, junction ambient, leaded R thJA - - 1.2 K/W - - 62 SMD version, device on PCB R thJA minimal footprint 6 cm2 cooling area2) - - 62 - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source bre...