OptiMOS®-T2 Power-Transistor
Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C ...
OptiMOS®-T2 Power-
Transistor
Features N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant) 100% Avalanche tested
IPB77N06S3-09 IPI77N06S3-09, IPP77N06S3-09
Product Summary V DS R DS(on),max (SMD version) ID
55 V 8.8 mΩ 77 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type IPB77N06S3-09 IPI77N06S3-09 IPP77N06S3-09
Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Marking 3N0609 3N0609 3N0609
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25 °C, V GS=10 V
T C=100 °C, V GS=10 V2)
Pulsed drain current1) Avalanche energy, single pulse1)
I D,pulse E AS
T C=25 °C I D=38.5 A
Avalanche current, single pulse
I AS
Gate source voltage2)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value 77
55
160 245 77 ±20 107 -55 ... +175 55/175/56
Unit A
mJ A V W °C
Rev. 1.1
page 1
2007-11-07
IPB77N06S3-09 IPI77N06S3-09, IPP77N06S3-09
Parameter
Symbol
Conditions
min.
Values typ.
Unit max.
Thermal characteristics1)
Thermal resistance, junction - case R thJC
Thermal resistance, junction ambient, leaded
R thJA
- - 1.4 K/W - - 62
SMD version, device on PCB
R thJA
minimal footprint 6 cm2 cooling area3)
-
- 62 - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source...
