IPD70N04S3-07

OptiMOS®-T Power-Transistor Features N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (RoHS compliant) 100% Avalanche tested IPD70N04S3-07 Product Summary V DS R DS(on),max ID 40 V 6.0 mΩ 82 A PG-TO252-3-11 Type IPD70N04S3-07 Package Marking PG-TO252-3-11 QN0407 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V1) Pulsed drain current1) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=50 A Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value 82 58 280 145 ±20 79 -55 ... +175 55/175/56 Unit A mJ V W °C Rev. 1.0 page 1 2007-05-03 IPD70N04S3-07 Parameter Symbol Conditions Thermal characteristics1) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area2) min. Values typ. Unit max. - - 1.9 K/W - - 62 - - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 40 - -V Gate threshold voltage V GS(th) V DS=V GS, I D=50 µA 2.1 3.0 4.0 Zero gate voltage drain current I DSS V DS=40 V, V GS=0 V, T j=25 °C - - 1 µA Gate-source leakage current Drain-source on-state resistance I...