IPD70P04P4-09

OptiMOS®-P2 Power-Transistor Features P-channel - Normal Level - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (RoHS compliant) 100% Avalanche tested IPD70P04P4-09 Product Summary V DS R DS(on) ID -40 V 8.9 mΩ -73 A PG-TO252-3-313 Type IPD70P04P4-09 Package Marking PG-TO252-3-313 4P0409 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25°C, V GS=-10V T C=100°C, V GS=-10V1) Pulsed drain current1) I D,pulse T C=25°C Avalanche energy, single pulse1) E AS I D=-36A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - Rev. 1.0 page 1 Value -73 -52 -292 24 -73 ±20 75 -55 ... +175 55/175/56 Unit A mJ A V W °C 2010-05-26 IPD70P04P4-09 Parameter Symbol Conditions Thermal characteristics1) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area2) min. Values typ. Unit max. - - 2 K/W - - 62 - - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance V (BR)DSS V GS=0V, I D= -1mA -V GS(th) V DS=V GS, I D=-120µA I DSS V DS=-32V, V GS=0...