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TPAR3D

Taiwan Semiconductor

200V - 600V Avalanche Fast Recovery Surface Mount Rectifiers

TPAR3D - TPAR3J Taiwan Semiconductor CREAT BY ART 3A, 200V - 600V Avalanche Fast Recovery Surface Mount Rectifiers FEAT...


Taiwan Semiconductor

TPAR3D

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Description
TPAR3D - TPAR3J Taiwan Semiconductor CREAT BY ART 3A, 200V - 600V Avalanche Fast Recovery Surface Mount Rectifiers FEATURES - Very low profile, typical height of 1.1mm - Excellent high temperature stability - Glass passivated chip junction - Controled avalanche characteristics - Low leakage current - High forward surge capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition TO-277A (SMPC) MECHANICAL DATA Case: TO-277A (SMPC) Molding compound, UL flammability classification rating 94V-0 Moisture sensitivity level: level 1, per J-STD-020 Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test Polarity: Indicated by cathode band Weight: 95 mg (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25°C unless otherwise noted) PARAMETER Marking code SYMBOL TPAR3D AR3D TPAR3G AR3G TPAR3J AR3J Maximum repetitive peak reverse voltage Maximum average forward rectified current Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load VRRM 200 400 600 IF(AV) 3 IFSM 60 Maximum instantaneous forward voltage (1) IF=3A TJ=25°C TJ=125°C Maximum reverse current Rated VR TJ=25°C TJ=125°C Non-reprtitive avalanche energy IAS = 2.5A Max IAS = 1.0A Typ Maximum reverse recovery time IF=0.5A, IR=1A, IRR=0.25A Typical thermal resistance Typical ju...




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