N-Channel MOSFET
BRF8N65(CS8N65F)
N-Channel MOSFET/N MOS
: DC/DC 。
Purpose: These devices are well suited for high efficiency switchi...
Description
BRF8N65(CS8N65F)
N-Channel MOSFET/N MOS
: DC/DC 。
Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.
: ,,。
Features: Low gate charge, low crss, fast switching.
/Absolute maximum ratings(Ta=25℃)
Symbol
Rating
Unit
VDSS 650 V
ID(Tc=25℃)
7.5 A
ID(Tc=100℃)
4.6 A
IDM 30 A
VGSS
±30
V
EAS 230 mJ
EAR 10 mJ
IAR 7.5 A
PD(Tc=25℃)
48 W
TJ,TSTG
-55 to 150 ℃
/Electrical Characteristics(Ta=25℃)
Symbol
Test Conditions
BVDSS
VGS=0V
ID=250μA
IDSS
VDS=650V VDS=480V
VGS=0V TC=125℃
IGSS VGS=±30V VDS=0V
VGS(th)
VDS=VGS
ID=250μA
RDS(on)
VGS=10V
ID=3.75A
gFS
VDS=40V
ID=3.75A
VSD
VGS=0V
IS=7.5A
Ciss
Coss VDS=25V VGS=0V f=1.0MHz
Crss
td(on)
tr td(off)
VDD=300V ID=7.5A RG=25Ω
tf
Min 650
2.0
Typ
1.0 8.7
965 105 12 16.5 60.5 81 64.5
Max
1.0 10 ±0.1 4.0 1.4
1.4 1255 135 16 45 130 170 140
FOSHAN BLUE ROCKET ELECTRONICS CO., LTD.
Unit
V μA μA μA V Ω S V
pF
ns
BRF8N65(CS8N65F)
FOSHAN BLUE ROCKET ELECTRONICS CO., LTD.
...
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