30V Dual Asymmetric N-Channel MOSFET
AON7934
30V Dual Asymmetric N-Channel AlphaMOS
General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology ...
Description
AON7934
30V Dual Asymmetric N-Channel AlphaMOS
General Description
Latest Trench Power AlphaMOS (αMOS LV) technology Very Low RDS(on) at 4.5VGS Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V)
Q1 30V 16A <10.2mΩ <15.8mΩ
Q2 30V 18A <7.7mΩ <11.6mΩ
Application
DC/DC Converters in Computing, Servers, and POL Isolated DC/DC Converters in Telecom and Industrial
100% UIS Tested 100% Rg Tested
Power DFN3x3A
Top View
Bottom View
G2 S2 S2 S2 (S1/D2)
D1
Top View
Bottom View
D1 G1 D1 D1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID IDM
Continuous Drain TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche Energy L=0.05mH C
IDSM
IAS EAS
VDS Spike
100ns
VSPIKE
TC=25°C Power Dissipation B TC=100°C
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Max Q1
Max Q2
30
±20 ±20
16 18
12 14
64 72
13 15
7.8 9
19 25
3.0 4.1
36 36
23 25
9 10
2.5 2.5
0.9 0.9
-55 to 150
Units V V
A
A A mJ V W
W °C
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJC
Typ Q1 40 70 4.5
Max Q1 50 90 5.4
Typ Q2 40 70 4.2
Max Q2 50 90 5
Units
...
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