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FU-645SDF-V1M1B Dataheets PDF



Part Number FU-645SDF-V1M1B
Manufacturers Mitsubishi Electric Semiconductor
Logo Mitsubishi Electric Semiconductor
Description 1.55 um UNCOOLED DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL (BIAS CIRCUIT INTEGRATED/ DIGITAL APPLICATION)
Datasheet FU-645SDF-V1M1B DatasheetFU-645SDF-V1M1B Datasheet (PDF)

TZ7-01-111B (1/6) June 20, 2001 Approved Approved Charged H.Koyanagi Specification of uncooled DFB-LD module Module type: FU-645SDF-x1Mxx ( Mitsubishi standard product ) A B x C D Date 20.June.’01 Approved Y.Hozumi MITSUBISHI ELECTRIC CORPORATION * Mitsubishi Electric Corp. reserves the right to change product design and specification without notice. TZ7-01-111B (2/6) MITSUBISHI (OPTICAL DEVICES) 1.55 µ m UNCOOLED DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL (BIAS CIRCUIT INTEGRATED, D.

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TZ7-01-111B (1/6) June 20, 2001 Approved Approved Charged H.Koyanagi Specification of uncooled DFB-LD module Module type: FU-645SDF-x1Mxx ( Mitsubishi standard product ) A B x C D Date 20.June.’01 Approved Y.Hozumi MITSUBISHI ELECTRIC CORPORATION * Mitsubishi Electric Corp. reserves the right to change product design and specification without notice. TZ7-01-111B (2/6) MITSUBISHI (OPTICAL DEVICES) 1.55 µ m UNCOOLED DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL (BIAS CIRCUIT INTEGRATED, DIGITAL APPLICATION) DESCRIPTION Module type FU-645SDF-x1Mxx is a 1.55µm Uncooled DFB-LD module with single-mode optical fiber. This module is suitable to a light source for use in 2.5Gb/s digital optical communication systems. FEATURES l λ/4 shifted Multi quantum wells (MQW) DFB Laser Diode module l Input impedance is 25Ω l Emission wavelength is in 1.55µm band l High-speed response l Built-in optical isolator l Built-in thermistor and bias T l 8-pin Mini-DIL package with Gull wing leads l With photodiode for optical output monitor APPLICATION High speed transmission systems (~2.5Gb/s) FU-645SDF-x1Mxx ABSOLUTE MAXIMUM RATINGS (Tc=25°C) Parameter Symbol Laser diode Optical output Pf power Forward current If Reverse voltage Vrl Photodiode Reverse voltage Vrd Forward current Ifd Operating case temperature Tc Storage temperature Tstg Conditions CW CW - Rating 6 100 2 20 2 -5 ~ +70 -40 ~ +85 Unit mW mA V V mA °C °C TZ7-01-111B (3/6) MITSUBISHI (OPTICAL DEVICES) 1.55 µ m UNCOOLED DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL (BIAS CIRCUIT INTEGRATED, DIGITAL APPLICATION) ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=-5~70°C, unless otherwise noted) Parameter Symbol Test Conditions Limits Unit Min. Typ. Max. Threshold current Ith CW, Tc=25°C 10 25 mA CW 2 40 µW Optical output power Pth CW, Ibias=Ith 50 at threshold current Operating current Iop CW, Pf=2mW, Tc=25°C 40 70 mA CW, Pf=2mW, Tc=70°C 60 90 Operating voltage Vop CW, Pf=2mW, Tc=25°C 1.2 1.5 V CW, Pf=2mW, Tc=70°C 1.6 1.8 Ω Input impedance Zin 25 Optical output power from Pf CW, nominal 2 mW fiber end λc Light-emission central CW, Pf=1mW 1530 1550 1570 nm wavelength λct Wavelength temperature 0.10 0.12 nm/°C coefficient ∆λ Spectral width (Note1), -20dB 0.4 nm Side mode suppression ratio Sr (Note1) 30 45 dB Cutoff frequency fc Pf=1mW 3.5 GHz (-1.5dB optical) Rise and fall time (10~90%) tr, tf (Note1) 125 150 psec Dispersion penalty Pp (Note1), +1800ps/nm disp. 2 dB Relative intensity noise Nr CW, Pf=1mW, f=1GHz -150 -140 dB/Hz Tracking error (Note 2) Er CW, APC(Imon=const.) 0.5 1.25 dB η Differential efficiency CW, Tc=25°C 0.06 0.1 mW/ mA CW 0.036 0.15 Monitor current Imon CW, Pf=1mW, Vrd=5V 0.05 1 mA Optical isolation Iso 20 dB µA Dark current (PD) Id Vrd=5V 0.1 Capacitance (PD) Ct Vrd=5V, f=1MHz 10 pF Thermistor resistance Rth Tc=25°C 9.5 10 10.5 kΩ B constant of Rth B 3950 K 23 Note 1) 2.48832Gb/s NRZ, 2 -1, Pf_ave=1mW, Extinction ratio 10dB, optical return loss from the line should be greater than 24dB in o.


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