Document
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Pb Free Product
NCE2305
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
General Features
● VDS = -20V,ID = -4.1A RDS(ON) <75mΩ @ VGS=-2.5V RDS(ON) < 52mΩ @ VGS=-4.5V
D G
S Schematic diagram
● High power and current handing capability ● Lead free product is acquired ● Surface mount package
Marking and pin assignment
Application
● PWM applications ● Load switch ● Power management
SOT-23 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
2305
NCE2305
SOT-23
Reel Size Ø180mm
Tape width 8 mm
Quantity 3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC =25℃
Continuous Drain Current
TC =70℃ TA =25℃
ID
TA =70℃
Drain Current -Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range
IDM PD TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Limit
-20 ±12 -4.1 -3.2 -3 -2.3 -15 1.7 -55 To 150
74
Unit
V V
A
A W ℃
℃/W
Wuxi NCE Power Semiconductor Co., Ltd
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Pb Free Product
NCE2305
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current
BVDSS IDSS
VGS=0V ID=-250μA VDS=-20V,VGS=0V
Gate-Body Leakage Current
IGSS VGS=±12V,VDS=0V
On Characteristics (Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250μA
Drain-Source On-State Resistance
RDS(ON)
VGS=-4.5V, ID=-4.1A VGS=-2.5V, ID=-3A
Forward Transconductance
gFS VDS=-5V,ID=-3.5A
Dynamic Characteristics (Note4)
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Clss Coss Crss
VDS=-4V,VGS=0V, F=1.0MHz
Switching Characteristics (Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time
tr td(off)
tf
VDD=-4V,ID=-3.3A , RL=-1.2Ω,VGEN=-4.5V,Rg=1Ω
Total Gate Charge Gate-Source Charge Gate-Drain Charge
Qg Qgs VDS=-4V,ID=-4.1A,VGS=-4.5V Qgd
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3) Diode Forward Current (Note 2)
VSD VGS=0V,IS=-1.6A IS
Min
-20 -
-0.45 -
-
-
-
Typ
-
-0.7
45 60
8.5
740 290 190
12 35 30 10 7.8 1.2 1.6
-
Max
-1 ±100
-1.0
52 75
-
-
-
-1.2 1.6
Unit
V μA nA
V
mΩ
S
PF PF PF
nS nS nS nS nC nC nC
V A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production
Wuxi NCE Power Semiconductor Co., Ltd
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http://www.ncepower.com Typical Electrical and Thermal Characteristics
Figure 1:Switching Test Circuit
Pb Free Product
NCE2305
td(on)
VOUT
VIN
10%
ton tr
td(off)
toff tf
90%
INVERTED
10%
90% 10%
50%
90% 50%
PULSE WIDTH
Figure 2:Switching Waveforms
ID- Drain Current (A)
PD Power(W)
TJ-Junction Temperature(℃)
Figure 3 Power Dissipation
TJ-Junction Temperature(℃)
Figure 4 Drain Current
Rdson On-Resistance(Ω)
ID- Drain Current (A)
Vds Drain-Source Voltage (V)
Figure 5 Output Characteristics
ID- Drain Current (A)
Figure 6 Drain-Source On-Resistance
Wuxi NCE Power Semiconductor Co., Ltd
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Pb Free Product
NCE2305
Normalized On-Resistance
ID- Drain Current (A)
Rdson On-Resistance(Ω)
Vgs Gate-Source Voltage (V)
Figure 7 Transfer Characteristics
TJ-Junction Temperature(℃)
Figure 8 Drain-Source On-Resistance
C Capacitance (pF)
Vgs Gate-Source Voltage (V)
Figure 9 Rdson vs Vgs
Vds Drain-Source Voltage (V)
Figure 10 Capacitance vs Vds
Is- Reverse Drain Current (A)
Qg Gate Charge (nC)
Figure 11 Gate Charge
Vsd Source-Drain Voltage (V)
Figure 12 Source- Drain Diode Forward
Wuxi NCE Power Semiconductor Co., Ltd
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Vgs Gate-Source Voltage (V)
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Pb Free Product
NCE2305
ID- Drain Current (A)
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
r(t),Normalized Effective Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
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http://www.ncepower.com SOT-23 Package Information
Pb Free Product
NCE2305
Symbol
A A1 A2 b c D E E1 e e1 L L1 θ
MIN.
0.900 0.000 0.900 0.300 0.080 2.800 1.200 2.250
1.800
0.300 0°
Dimensions in Millimeters MAX.
1.150 0.100 1.050 0.500 0.150 3.000 1.400 2.550 0.950TYP 2.000 0.550REF 0.500
8°
Notes
1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controll.