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NCE2305 Dataheets PDF



Part Number NCE2305
Manufacturers NCE Power Semiconductor
Logo NCE Power Semiconductor
Description NCE P-Channel Enhancement Mode Power MOSFET
Datasheet NCE2305 DatasheetNCE2305 Datasheet (PDF)

http://www.ncepower.com Pb Free Product NCE2305 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -20V,ID = -4.1A RDS(ON) <75mΩ @ VGS=-2.5V RDS(ON) < 52mΩ @ VGS=-4.5V D G S Schematic diagram ● High power and current handing capability ● Lead free produ.

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http://www.ncepower.com Pb Free Product NCE2305 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -20V,ID = -4.1A RDS(ON) <75mΩ @ VGS=-2.5V RDS(ON) < 52mΩ @ VGS=-4.5V D G S Schematic diagram ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Marking and pin assignment Application ● PWM applications ● Load switch ● Power management SOT-23 top view Package Marking and Ordering Information Device Marking Device Device Package 2305 NCE2305 SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC =25℃ Continuous Drain Current TC =70℃ TA =25℃ ID TA =70℃ Drain Current -Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range IDM PD TJ,TSTG Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA Limit -20 ±12 -4.1 -3.2 -3 -2.3 -15 1.7 -55 To 150 74 Unit V V A A W ℃ ℃/W Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.1 http://www.ncepower.com Pb Free Product NCE2305 Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current BVDSS IDSS VGS=0V ID=-250μA VDS=-20V,VGS=0V Gate-Body Leakage Current IGSS VGS=±12V,VDS=0V On Characteristics (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA Drain-Source On-State Resistance RDS(ON) VGS=-4.5V, ID=-4.1A VGS=-2.5V, ID=-3A Forward Transconductance gFS VDS=-5V,ID=-3.5A Dynamic Characteristics (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance Clss Coss Crss VDS=-4V,VGS=0V, F=1.0MHz Switching Characteristics (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time tr td(off) tf VDD=-4V,ID=-3.3A , RL=-1.2Ω,VGEN=-4.5V,Rg=1Ω Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs VDS=-4V,ID=-4.1A,VGS=-4.5V Qgd Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) Diode Forward Current (Note 2) VSD VGS=0V,IS=-1.6A IS Min -20 - -0.45 - - - - Typ - -0.7 45 60 8.5 740 290 190 12 35 30 10 7.8 1.2 1.6 - Max -1 ±100 -1.0 52 75 - - - -1.2 1.6 Unit V μA nA V mΩ S PF PF PF nS nS nS nS nC nC nC V A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production Wuxi NCE Power Semiconductor Co., Ltd Page 2 v1.1 http://www.ncepower.com Typical Electrical and Thermal Characteristics Figure 1:Switching Test Circuit Pb Free Product NCE2305 td(on) VOUT VIN 10% ton tr td(off) toff tf 90% INVERTED 10% 90% 10% 50% 90% 50% PULSE WIDTH Figure 2:Switching Waveforms ID- Drain Current (A) PD Power(W) TJ-Junction Temperature(℃) Figure 3 Power Dissipation TJ-Junction Temperature(℃) Figure 4 Drain Current Rdson On-Resistance(Ω) ID- Drain Current (A) Vds Drain-Source Voltage (V) Figure 5 Output Characteristics ID- Drain Current (A) Figure 6 Drain-Source On-Resistance Wuxi NCE Power Semiconductor Co., Ltd Page 3 v1.1 http://www.ncepower.com Pb Free Product NCE2305 Normalized On-Resistance ID- Drain Current (A) Rdson On-Resistance(Ω) Vgs Gate-Source Voltage (V) Figure 7 Transfer Characteristics TJ-Junction Temperature(℃) Figure 8 Drain-Source On-Resistance C Capacitance (pF) Vgs Gate-Source Voltage (V) Figure 9 Rdson vs Vgs Vds Drain-Source Voltage (V) Figure 10 Capacitance vs Vds Is- Reverse Drain Current (A) Qg Gate Charge (nC) Figure 11 Gate Charge Vsd Source-Drain Voltage (V) Figure 12 Source- Drain Diode Forward Wuxi NCE Power Semiconductor Co., Ltd Page 4 v1.1 Vgs Gate-Source Voltage (V) http://www.ncepower.com Pb Free Product NCE2305 ID- Drain Current (A) Vds Drain-Source Voltage (V) Figure 13 Safe Operation Area Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance r(t),Normalized Effective Transient Thermal Impedance Wuxi NCE Power Semiconductor Co., Ltd Page 5 v1.1 http://www.ncepower.com SOT-23 Package Information Pb Free Product NCE2305 Symbol A A1 A2 b c D E E1 e e1 L L1 θ MIN. 0.900 0.000 0.900 0.300 0.080 2.800 1.200 2.250 1.800 0.300 0° Dimensions in Millimeters MAX. 1.150 0.100 1.050 0.500 0.150 3.000 1.400 2.550 0.950TYP 2.000 0.550REF 0.500 8° Notes 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controll.


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