NCE3007S

http://www.ncepower.com Pb Free Product NCE3007S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE3007S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in load switch and battery protection applications. General Features ● VDS =-30V,ID =-6.5A RDS(ON) < 46mΩ @ VGS=-10V RDS(ON) < 72mΩ @ VGS=-4.5V Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current Application ● Load switch ● battery protection Marking and pin assignment 100% UIS Tested 100% Rg Tested SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package 3007 NCE3007S SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range IDM PD TJ,TSTG Limit -30 ±20 -6.5 -4.5 -30 3.1 -55 To 150 Unit V V A A A W ℃ Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.0 http://www.ncepower.com Thermal Characteristic Thermal Resistance,Junction-to-Ambient(Note 2) RθJA Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA Zero Gate Voltage...