NCE P-Channel Enhancement Mode Power MOSFET
http://www.ncepower.com
Pb Free Product
NCE4403
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE4403 us...
Description
http://www.ncepower.com
Pb Free Product
NCE4403
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE4403 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =-30V,ID =-6.1A RDS(ON) < 46mΩ @ VGS=-10V RDS(ON) < 61mΩ @ VGS=-4.5V RDS(ON) <117mΩ @ VGS=-2.5V
Schematic diagram
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Fast switching speed
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
Marking and pin assignment
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
4403
NCE4403
SOP-8
Reel Size Ø330mm
Tape width 12mm
Quantity 2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range
IDM PD TJ,TSTG
Limit
-30 ±12 -6.1 -4.3 30 2.5 -55 To 150
Unit
V V A A A W ℃
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
http://www.ncepower.com
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient(Note 2)
Pb Free Product
NCE4403
RθJA
50 ℃/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Conditi...
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