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CM2304 Dataheets PDF



Part Number CM2304
Manufacturers CHIMICRON SEMICONDUCTOR
Logo CHIMICRON SEMICONDUCTOR
Description N-Channel Enhancement Mode Power MOSFET
Datasheet CM2304 DatasheetCM2304 Datasheet (PDF)

CM2304 N-Channel Enhancement Mode Power MOSFET 30VDS/ ±20VGS/3.6A(ID) Part No CM2304 Description The NCE2304 uses advanced trench technology to provide excellent R DS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications.. Application ●Battery protection ●Load switch ●Power management Product Summary VDS = 30V,I D = 3.6A RDS(ON) < 73mΩ @ VGS=4.5V RDS(ON) <58m Ω @ VGS=10V D S G SOT-23 Package Absolute Maximum Ratings (TA=25℃unless otherwise not.

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CM2304 N-Channel Enhancement Mode Power MOSFET 30VDS/ ±20VGS/3.6A(ID) Part No CM2304 Description The NCE2304 uses advanced trench technology to provide excellent R DS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications.. Application ●Battery protection ●Load switch ●Power management Product Summary VDS = 30V,I D = 3.6A RDS(ON) < 73mΩ @ VGS=4.5V RDS(ON) <58m Ω @ VGS=10V D S G SOT-23 Package Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Current Drain Pulsed Drain Current(Note 1) Power Description Operating Junction and Storage Temperature Range Thermal Resistance Junction to Ambient (Note 2) VDS VGS ID IDM PD Tj, TSTG RθJA Maximum 30 ±20 3.6 15 1.7 -55°C to 150° 73.5 Units V V A A W ℃ ℃/w TAIWAN CHIMICRON SEMICONDUCTOR CO., LTD Rev. 1. 3 Dec. 2012 www.chimicron.com [email protected] Page 1 of 5 CM2304 N-Channel Enhancement Mode Power MOSFET Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current On Characteristics (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Trans conductance Dynamic Characteristics (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics Diode Forward Current (Note 2) Diode Forward Voltage (Note 3) symbol BVDSS IDSS IGSS VGS(th) RDS(ON) gFS Clss Coss Crss td(on) tr td(off) td(off) Qg Qgs Qgd IS VSD Test Conditions Min Type Max Units VGS = 0V, ID=250μA VDS=30V,VGS=0V VGS=±20V,VDS=0V 30 - 33 - V - 1 μA - ±100 nA VDS=VGS, ID=250uA 1.2 1.5 2.2 V VGS=4.5V, ID=3.1A VGS=10V, ID=3.6A - 61 73 mΩ 47 58 VDS=5V,ID=3.6A - 11 - S - 230 - PF VDS=15V,VGS=0V, - 40 - PF F=1.0MHz - 17 - PF - 10 - nS VDD=10V,I D=3.6A VGS=4.5V,R - 50 - nS GEN=6Ω - 10 - nS - 20 - nS VDS=15V,I D=3.6A, 4.0 10 nC VGS=10V 0.75 - nC - 0.65 - nC VGS=0V,IS=2.7A - - 1.6 A - 0.8 1.2 V Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤10 sec. 3. Pulse Test: Pulse Width ≤300μs, Duty Cycle ≤2%. 4. Guaranteed by design, not subject to production TAIWAN CHIMICRON SEMICONDUCTOR CO., LTD Rev. 1. 3 Dec. 2012 www.chimicron.com [email protected] Page 2 of 5 CM2304 N-Channel Enhancement Mode Power MOSFET Typical Electrical and Thermal Characteristics Figure 1: Switching Test Circuit Figure 2: Switching Waveforms TJ-Junction Temperature(℃) Figure 3 Power Dissipation TJ-Junction Temperature(℃) Figure 4 Drain Current Vds Drain-Source Voltage (V) Figure 5 Output CHARACTERISTICS ID- Drain Current (A) Figure 6 Drain-Source On-Resistance TAIWAN CHIMICRON SEMICONDUCTO.


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