CM2304
N-Channel Enhancement Mode Power MOSFET
30VDS/ ±20VGS/3.6A(ID)
Part No
CM2304
Description
The NCE2304 uses advanced trench technology to provide
excellent R DS(ON) and low gate charge .This device is
suitable for use as a load switch or in PWM applications..
Application
●Battery protection ●Load switch ●Power management
Product Summary VDS = 30V,I D = 3.6A RDS(ON) < 73mΩ @ VGS=4.5V RDS(ON) <58m Ω @ VGS=10V
D
S
G
SOT-23 Package
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage
Continuous Current Drain
Pulsed Drain Current(Note 1) Power Description Operating Junction and Storage Temperature Range Thermal Resistance Junction to Ambient (Note 2)
VDS VGS
ID
IDM PD Tj, TSTG RθJA
Maximum
30 ±20 3.6 15 1.7 -55°C to 150° 73.5
Units
V V
A
A W ℃ ℃/w
TAIWAN CHIMICRON SEMICONDUCTOR CO., LTD
Rev. 1. 3 Dec. 2012
www.chimicron.com
[email protected]
Page 1 of 5
CM2304
N-Channel Enhancement Mode Power MOSFET
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter Off Characteristics Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source
On-State
Resistance
Forward Trans conductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge Drain-Source Diode Characteristics
Diode Forward Current (Note 2) Diode Forward Voltage (Note 3)
symbol
BVDSS IDSS
IGSS
VGS(th)
RDS(ON)
gFS
Clss Coss Crss
td(on) tr
td(off) td(off) Qg Qgs Qgd
IS VSD
Test Conditions
Min Type Max Units
VGS = 0V, ID=250μA VDS=30V,VGS=0V VGS=±20V,VDS=0V
30 -
33 - V - 1 μA - ±100 nA
VDS=VGS, ID=250uA
1.2 1.5 2.2 V
VGS=4.5V, ID=3.1A VGS=10V, ID=3.6A
-
61 73 mΩ 47 58
VDS=5V,ID=3.6A
- 11 - S
- 230 - PF VDS=15V,VGS=0V,
- 40 - PF F=1.0MHz
- 17 - PF
- 10 - nS
VDD=10V,I D=3.6A VGS=4.5V,R
-
50
- nS
GEN=6Ω
- 10 - nS
- 20 - nS
VDS=15V,I D=3.6A,
4.0 10 nC
VGS=10V
0.75 - nC - 0.65 - nC
VGS=0V,IS=2.7A
- - 1.6 A - 0.8 1.2 V
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤10 sec. 3. Pulse Test: Pulse Width ≤300μs, Duty Cycle ≤2%. 4. Guaranteed by design, not subject to production
TAIWAN CHIMICRON SEMICONDUCTOR CO., LTD
Rev. 1. 3 Dec. 2012
www.chimicron.com
[email protected]
Page 2 of 5
CM2304
N-Channel Enhancement Mode Power MOSFET
Typical Electrical and Thermal Characteristics
Figure 1: Switching Test Circuit
Figure 2: Switching Waveforms
TJ-Junction Temperature(℃) Figure 3 Power Dissipation
TJ-Junction Temperature(℃) Figure 4 Drain Current
Vds Drain-Source Voltage (V) Figure 5 Output CHARACTERISTICS
ID- Drain Current (A) Figure 6 Drain-Source On-Resistance
TAIWAN CHIMICRON SEMICONDUCTO.