NCE3050

http://www.ncepower.com Pb Free Product NCE3050 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3050 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =50A RDS(ON) < 9mΩ @ VGS=10V RDS(ON) < 15mΩ @ VGS=4.5V Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin Assignment 100% UIS TESTED! TO-220-3L top view Package Marking And Ordering Information Device Marking Device Device Package NCE3050 NCE3050 TO-220-3L Reel Size - Tape width - Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Derating factor ID (100℃) IDM PD Single pulse avalanche energy (Note 5) EAS Limit 30 ±20 50 35 140 60 0.4 70 Quantity - Unit V V A A A W W/℃ mJ Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.0 http://www.ncepower.com Pb Free Product NCE3050 Operating Junction and Storage Temperature Range Thermal Characteristic...