NCE3050I

http://www.ncepower.com Pb Free Product NCE3050I NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE3050I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDS =30V,ID =50A RDS(ON) < 11mΩ @ VGS=10V RDS(ON) < 16mΩ @ VGS=5V Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply Marking and pin Assignment 100% UIS TESTED! TO-251 top view Package Marking And Ordering Information Device Marking Device Device Package NCE3050I NCE3050I TO-251 Reel Size - Tape width - Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation IDM PD Derating factor Limit 30 ±20 50 35 140 60 0.4 Quantity - Unit V V A A A W W/℃ Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.1 http://www.ncepower.com Pb Free Product NCE3050I Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range EAS TJ,TSTG 70 -55 To 175 mJ ℃...