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Pb Free Product
NCE30H12K
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE30H12K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =30V,ID =120A RDS(ON) <3.5mΩ @ VGS=10V
(Typ:3.0mΩ)
Schematic diagram
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% ΔVds TESTED!
TO-252-2L top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
NCE30H12K
NCE30H12K
TO-252-2L
Reel Size -
Tape width -
Quantity -
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current Maximum Power Dissipation
IDM PD
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
30 ±20 120 84 400 120 350 -55 To 175
Unit
V V A A A W mJ ℃
Wuxi NCE Power Semiconductor Co., Ltd
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Pb Free Product
NCE30H12K
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
1.25 ℃/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current
BVDSS IDSS
VGS=0V ID=250μA VDS=30V,VGS=0V
30 -
-
V
- - 1 μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
- - ±100 nA
On Characteristics (Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
1 1.6
3
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=20A
- 3.0 3.5
mΩ
Forward Transconductance
gFS
VDS=10V,ID=20A
50 -
-
S
Dynamic Characteristics (Note4)
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Clss Coss Crss
VDS=25V,VGS=0V, F=1.0MHz
3550 1350 120
PF PF PF
Switching Characteristics (Note 4)
Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time
td(on) tr
td(off)
VGS=10V,VDS=20V RL=0.75Ω,RGEN=3Ω
- 11 - 10 - 38
-
nS nS nS
Turn-Off Fall Time Total Gate Charge Gate-Source Charge
tf - 11
Qg 48
Qgs VGS=10V,VDS=15V,ID=20A
11
-
nS nC nC
Gate-Drain Charge
Qgd
10 nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=20A
- - 1.2
V
Diode Forward Current (Note 2)
IS
-
- - 120
A
Reverse Recovery Time Reverse Recovery Charge
trr
TJ = 25°C, IF = 20A
- 21
-
nS
Qrr
di/dt = 100A/μs(Note3)
- 58
-
nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production
5. EAS condition:Tj=25℃,VDD=15V,VG=10V,L=0.5mH,Rg=25Ω
Wuxi NCE Power Semiconductor Co., Ltd
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Test circuit
1)EAS test Circuits
Pb Free Product
NCE30H12K
2)Gate charge test Circuit:
3)Switch Time Test Circuit:
Wuxi NCE Power Semiconductor Co., Ltd
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NCE30H12K
Normalized On-Resistance
ID- Drain Current (A)
Vds Drain-Source Voltage (V)
Figure 1 Output Characteristics
TJ-Junction Temperature(℃)
Figure 4 Rdson-Junction Temperature
Vgs Gate-Source Voltage (V)
ID- Drain Current (A)
Vgs Gate-Source Voltage (V)
Figure 2 Transfer Characteristics
Qg Gate Charge (nC)
Figure 5 Gate Charge
Is- Reverse Drain Current (A)
Rdson On-Resistance(mΩ)
ID- Drain Current (A)
Figure 3 Rdson- Drain Current
Vsd Source-Drain Voltage (V)
Figure 6 Source- Drain Diode Forward
Wuxi NCE Power Semiconductor Co., Ltd
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C Capacitance (pF)
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Pb Free Product
NCE30H12K
Normalized BVdss
Vds Drain-Source Voltage (V)
Figure 7 Capacitance vs Vds
TJ-Junction Temperature(℃)
Figure 9 BVDSS vs Junction Temperature
Vds Drain-Source Voltage (V)
Figure 8 Safe Operation Area
TJ-Junction Temperature(℃)
Figure 10 VGS(th) vs Junction Temperature
ID- Drain Current (A)
r(t),Normalized Effective Transient Thermal Impedance
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
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http://www.ncepower.com TO-252-2L Package Information
Pb Free Product
NCE30H12K
Wuxi NCE Power Semiconductor Co., Ltd
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Pb Free Product
NCE30H12K
Attention:
■ Any and all NCE power products .