DatasheetsPDF.com

NCE30H12K Dataheets PDF



Part Number NCE30H12K
Manufacturers NCE Power Semiconductor
Logo NCE Power Semiconductor
Description NCE N-Channel Enhancement Mode Power MOSFET
Datasheet NCE30H12K DatasheetNCE30H12K Datasheet (PDF)

http://www.ncepower.com Pb Free Product NCE30H12K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H12K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =120A RDS(ON) <3.5mΩ @ VGS=10V (Typ:3.0mΩ) Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with hi.

  NCE30H12K   NCE30H12K


Document
http://www.ncepower.com Pb Free Product NCE30H12K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H12K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =120A RDS(ON) <3.5mΩ @ VGS=10V (Typ:3.0mΩ) Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ΔVds TESTED! TO-252-2L top view Package Marking And Ordering Information Device Marking Device Device Package NCE30H12K NCE30H12K TO-252-2L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation IDM PD Single pulse avalanche energy (Note 5) EAS Operating Junction and Storage Temperature Range TJ,TSTG Limit 30 ±20 120 84 400 120 350 -55 To 175 Unit V V A A A W mJ ℃ Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.0 http://www.ncepower.com Pb Free Product NCE30H12K Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) RθJC 1.25 ℃/W Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current BVDSS IDSS VGS=0V ID=250μA VDS=30V,VGS=0V 30 - - V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1 1.6 3 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=20A - 3.0 3.5 mΩ Forward Transconductance gFS VDS=10V,ID=20A 50 - - S Dynamic Characteristics (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance Clss Coss Crss VDS=25V,VGS=0V, F=1.0MHz 3550 1350 120 PF PF PF Switching Characteristics (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time td(on) tr td(off) VGS=10V,VDS=20V RL=0.75Ω,RGEN=3Ω - 11 - 10 - 38 - nS nS nS Turn-Off Fall Time Total Gate Charge Gate-Source Charge tf - 11 Qg 48 Qgs VGS=10V,VDS=15V,ID=20A 11 - nS nC nC Gate-Drain Charge Qgd 10 nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=20A - - 1.2 V Diode Forward Current (Note 2) IS - - - 120 A Reverse Recovery Time Reverse Recovery Charge trr TJ = 25°C, IF = 20A - 21 - nS Qrr di/dt = 100A/μs(Note3) - 58 - nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition:Tj=25℃,VDD=15V,VG=10V,L=0.5mH,Rg=25Ω Wuxi NCE Power Semiconductor Co., Ltd Page 2 v1.0 http://www.ncepower.com Test circuit 1)EAS test Circuits Pb Free Product NCE30H12K 2)Gate charge test Circuit: 3)Switch Time Test Circuit: Wuxi NCE Power Semiconductor Co., Ltd Page 3 v1.0 http://www.ncepower.com Typical Electrical and Thermal Characteristics (Curves) Pb Free Product NCE30H12K Normalized On-Resistance ID- Drain Current (A) Vds Drain-Source Voltage (V) Figure 1 Output Characteristics TJ-Junction Temperature(℃) Figure 4 Rdson-Junction Temperature Vgs Gate-Source Voltage (V) ID- Drain Current (A) Vgs Gate-Source Voltage (V) Figure 2 Transfer Characteristics Qg Gate Charge (nC) Figure 5 Gate Charge Is- Reverse Drain Current (A) Rdson On-Resistance(mΩ) ID- Drain Current (A) Figure 3 Rdson- Drain Current Vsd Source-Drain Voltage (V) Figure 6 Source- Drain Diode Forward Wuxi NCE Power Semiconductor Co., Ltd Page 4 v1.0 C Capacitance (pF) http://www.ncepower.com Pb Free Product NCE30H12K Normalized BVdss Vds Drain-Source Voltage (V) Figure 7 Capacitance vs Vds TJ-Junction Temperature(℃) Figure 9 BVDSS vs Junction Temperature Vds Drain-Source Voltage (V) Figure 8 Safe Operation Area TJ-Junction Temperature(℃) Figure 10 VGS(th) vs Junction Temperature ID- Drain Current (A) r(t),Normalized Effective Transient Thermal Impedance Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance Wuxi NCE Power Semiconductor Co., Ltd Page 5 v1.0 http://www.ncepower.com TO-252-2L Package Information Pb Free Product NCE30H12K Wuxi NCE Power Semiconductor Co., Ltd Page 6 v1.0 http://www.ncepower.com Pb Free Product NCE30H12K Attention: ■ Any and all NCE power products .


NCE30H12 NCE30H12K NCE8601B


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)