INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Power Transistor
isc Product Specification
2SD1850
DESCRIPT...
INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon
NPN Power
Transistor
isc Product Specification
2SD1850
DESCRIPTION ·High Voltage ·High Switching Speed ·Wide Area of Safe Operation
APPLICATIONS ·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL VCBO VCES VCEO VEBO
PARAMETER
i.cnCollector-Base Voltage .iscsemCollector-Emitter Voltage
Collector-Emitter Voltage
wwwEmitter-Base Voltage
VALUE UNIT
1500
V
1500
V
700 V
7V
IC Collector Current-Continuous
7A
ICP Collector Current-Peak
20 A
IBB Base Current- Continuous
Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃
Tj Junction Temperature
3A
3 W
120
150 ℃
Tstg Storage Temperature Range
-55-150 ℃
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon
NPN Power
Transistor
isc Product Specification
2SD1850
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
7
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB=B 1.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 6A; IB=B 1.5A
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
8.0 V 1.5 V 5 25
hFE-2
DC Current Gain
IC= 6A; VCE= 5V
4.5
VCB= 1000V; IE= 0
ICBO Collector Cutoff Current
i.cnfT Transition Frequency .iscsemSwitching Times, Resistive Load wwwts Storage Time
VCB= 1500V; IE= 0 IC= 1A; VCE= 10V
IC= 6A; IB1= 1.5A; IB2= -3A, VCC= 200...