Document
OptiMOS®-T2 Power-Transistor
Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested
IPD40N03S4L-08
Product Summary V DS R DS(on),max ID
30 V 8.3 mW 40 A
PG-TO252-3-11
Type IPD40N03S4L-08
Package
Marking
PG-TO252-3-11 4N03L08
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V1)
T C=100°C, V GS=10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse2) E AS I D=40A
Avalanche current, single pulse
I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value 40
38
160 23 40 ±16 42 -55 ... +175 55/175/56
Unit A
mJ A V W °C -
Rev. 1.1
page 1
2010-10-05
IPD40N03S4L-08
Parameter
Symbol
Conditions
Thermal characteristics2)
Thermal resistance, junction - case SMD version, device on PCB
R thJC R thJA
minimal footprint 6 cm2 cooling area3)
min.
Values typ.
Unit max.
- - 3.6 K/W - - 62 - - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current
Gate-source leakage current Drain-source on-state resistance
V (BR)DSS V GS=0V, I D= 1mA V GS(th) V DS=V GS, I D=13µA
I DSS
V DS=30V, V GS=0V, T j=25°C
V DS=30V, V GS=0V, T j=125°C2)
I GSS
V GS=16V, V DS=0V
R DS(on) V GS=4.5V, I D=20A
V GS=10V, I D=40A
30 -
-V
1.0 1.5 2.2
- 0.1 1 µA
- 10 100
- - 100 nA - 9.7 13.0 mW - 7.2 8.3
Rev. 1.1
page 2
2010-10-05
IPD40N03S4L-08
Parameter
Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage
Reverse Diode Diode continous forward current2) Diode pulse current2)
Diode forward voltage
Reverse recovery time2)
Symbol
Conditions
C iss C oss Crss t d(on) tr t d(off) tf
V GS=0V, V DS=15V, f =1MHz
V DD=15V, V GS=10V, I D=40A, R G=1.6W
Q gs Q gd Qg V plateau
V DD=24V, I D=40A, V GS=0 to 10V
IS I S,pulse
V SD
T C=25°C
V GS=0V, I F=40A, T j=25°C
t rr
V R=30V, I F=I S, di F/dt =100A/µs
min.
Values typ.
Unit max.
- 1170 1520 pF - 320 420 - 11 22 - 3 - ns -1- 12 -5-
- 4 5 nC - 24 - 15 20 - 3.4 - V
- - 30 A - - 120 0.6 0.95 1.3 V
- 12 - ns
Reverse recovery charge2)
Q rr
- 10 - nC
1) Current is limited by bondwire; with an R thJC = 3.6K/W the chip is able to carry 54A at 25°C.
2) Defined by design. Not subject to production test. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
Rev. 1.1
page 3
2010-10-05
P tot [W] I D [A]
1 Power dissipation P tot = f(T C); V GS ≥ 6 V
50
40
30
20
10
0 0 50 100 T C [°C]
3 Safe operating area I D = f(V DS); T C = 25 °C; D = 0 parameter: t p
1000
150
IPD40N03S4L-08
2 Drain current I D = f(T C); V GS ≥ 6 V
45
40
35
30
25
20
15
10
5
0 200 0
50 100 150 T C [°C]
4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T
101
200
I D [A] Z thJC [K/W]
100 10
1 µs 10 µs 100 µs
1 ms
0.5
100
0.1
10-1
0.05 0.01
10-2
single pulse
1 0.1
Rev. 1.1
1 10 V DS [V]
10-3
100
10-6
10-5
10-4
10-3
10-2
10-1
100
t p [s]
page 4
2010-10-05
IPD40N03S4L-08
5 Typ. output characteristics I D = f(V DS); T j = 25 °C parameter: V GS
160
10 V
140
120
6 Typ. drain-source on-state resistance R DS(on) = f(I D); T j = 25 °C parameter: V GS
40
5V
3 V 3.5 V
4V
4.5 V
35
4.5 V
30
100 25
I D [A] R DS(on) [mW]
80 20
4V
60 15
40
20
0 012 V DS [V]
7 Typ. transfer characteristics I D = f(V GS); V DS = 6V parameter: T j
120
-55 °C
100
3.5 V 3V
10 5
5V 10 V
0
34
0 20 40 60 80 100 120 140 160
I D [A]
8 Typ. drain-source on-state resistance R DS(on) = f(T j); I D = 40 A; V GS = 10 V
25 °C 175 °C
13 12 11
80 10
I D [A] R DS(on) [mW]
9 60
8
40 7
20
0 0123456 V GS [V]
6
5
4 -60 -20 20 60 100 140 180
T j [°C]
Rev. 1.1
page 5
2010-10-05
IPD40N03S4L-08
9 Typ. gate threshold voltage V GS(th) = f(T j); V GS = V DS parameter: I D
2
10 Typ. capacitances C = f(V DS); V GS = 0 V; f = 1 MHz
104
V GS(th) [V] C [pF]
1.75 1.5
1.25 1
130 µA 13 µA
103
Ciss Coss
0.75 0.5
102
0.25
0
-60 -20 20
60 100 140 180
T j [°C]
101 0
5 10 15 20 V DS [V]
11 Typical forward diode characteristicis IF = f(VSD) parameter: T j
103
12 Avalanche characteristics I A S= f(t AV) parameter: Tj(start)
100
Crss
25 30
102
25 °C 100 °C
10
150 °C
I F [A] I AV [A]
101
25 °C
1
100 0 0.2 0.4 0.6 0.8 1 1.2 1.4
V SD [V]
0.1 0.1
Rev. 1.1
page 6
1 10 100 1000 t AV [µs]
2010-10-05
IPD40N03S4L-08
13 Avalanche energy E AS = f(T j) parameter: I D
100
10 A
75
14 Drain-s.