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IPD40N03S4L-08 Dataheets PDF



Part Number IPD40N03S4L-08
Manufacturers Infineon
Logo Infineon
Description Power-Transistor
Datasheet IPD40N03S4L-08 DatasheetIPD40N03S4L-08 Datasheet (PDF)

OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested IPD40N03S4L-08 Product Summary V DS R DS(on),max ID 30 V 8.3 mW 40 A PG-TO252-3-11 Type IPD40N03S4L-08 Package Marking PG-TO252-3-11 4N03L08 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V.

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OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested IPD40N03S4L-08 Product Summary V DS R DS(on),max ID 30 V 8.3 mW 40 A PG-TO252-3-11 Type IPD40N03S4L-08 Package Marking PG-TO252-3-11 4N03L08 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V1) T C=100°C, V GS=10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse2) E AS I D=40A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25°C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - Value 40 38 160 23 40 ±16 42 -55 ... +175 55/175/56 Unit A mJ A V W °C - Rev. 1.1 page 1 2010-10-05 IPD40N03S4L-08 Parameter Symbol Conditions Thermal characteristics2) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) min. Values typ. Unit max. - - 3.6 K/W - - 62 - - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance V (BR)DSS V GS=0V, I D= 1mA V GS(th) V DS=V GS, I D=13µA I DSS V DS=30V, V GS=0V, T j=25°C V DS=30V, V GS=0V, T j=125°C2) I GSS V GS=16V, V DS=0V R DS(on) V GS=4.5V, I D=20A V GS=10V, I D=40A 30 - -V 1.0 1.5 2.2 - 0.1 1 µA - 10 100 - - 100 nA - 9.7 13.0 mW - 7.2 8.3 Rev. 1.1 page 2 2010-10-05 IPD40N03S4L-08 Parameter Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current2) Diode pulse current2) Diode forward voltage Reverse recovery time2) Symbol Conditions C iss C oss Crss t d(on) tr t d(off) tf V GS=0V, V DS=15V, f =1MHz V DD=15V, V GS=10V, I D=40A, R G=1.6W Q gs Q gd Qg V plateau V DD=24V, I D=40A, V GS=0 to 10V IS I S,pulse V SD T C=25°C V GS=0V, I F=40A, T j=25°C t rr V R=30V, I F=I S, di F/dt =100A/µs min. Values typ. Unit max. - 1170 1520 pF - 320 420 - 11 22 - 3 - ns -1- 12 -5- - 4 5 nC - 24 - 15 20 - 3.4 - V - - 30 A - - 120 0.6 0.95 1.3 V - 12 - ns Reverse recovery charge2) Q rr - 10 - nC 1) Current is limited by bondwire; with an R thJC = 3.6K/W the chip is able to carry 54A at 25°C. 2) Defined by design. Not subject to production test. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.1 page 3 2010-10-05 P tot [W] I D [A] 1 Power dissipation P tot = f(T C); V GS ≥ 6 V 50 40 30 20 10 0 0 50 100 T C [°C] 3 Safe operating area I D = f(V DS); T C = 25 °C; D = 0 parameter: t p 1000 150 IPD40N03S4L-08 2 Drain current I D = f(T C); V GS ≥ 6 V 45 40 35 30 25 20 15 10 5 0 200 0 50 100 150 T C [°C] 4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T 101 200 I D [A] Z thJC [K/W] 100 10 1 µs 10 µs 100 µs 1 ms 0.5 100 0.1 10-1 0.05 0.01 10-2 single pulse 1 0.1 Rev. 1.1 1 10 V DS [V] 10-3 100 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 4 2010-10-05 IPD40N03S4L-08 5 Typ. output characteristics I D = f(V DS); T j = 25 °C parameter: V GS 160 10 V 140 120 6 Typ. drain-source on-state resistance R DS(on) = f(I D); T j = 25 °C parameter: V GS 40 5V 3 V 3.5 V 4V 4.5 V 35 4.5 V 30 100 25 I D [A] R DS(on) [mW] 80 20 4V 60 15 40 20 0 012 V DS [V] 7 Typ. transfer characteristics I D = f(V GS); V DS = 6V parameter: T j 120 -55 °C 100 3.5 V 3V 10 5 5V 10 V 0 34 0 20 40 60 80 100 120 140 160 I D [A] 8 Typ. drain-source on-state resistance R DS(on) = f(T j); I D = 40 A; V GS = 10 V 25 °C 175 °C 13 12 11 80 10 I D [A] R DS(on) [mW] 9 60 8 40 7 20 0 0123456 V GS [V] 6 5 4 -60 -20 20 60 100 140 180 T j [°C] Rev. 1.1 page 5 2010-10-05 IPD40N03S4L-08 9 Typ. gate threshold voltage V GS(th) = f(T j); V GS = V DS parameter: I D 2 10 Typ. capacitances C = f(V DS); V GS = 0 V; f = 1 MHz 104 V GS(th) [V] C [pF] 1.75 1.5 1.25 1 130 µA 13 µA 103 Ciss Coss 0.75 0.5 102 0.25 0 -60 -20 20 60 100 140 180 T j [°C] 101 0 5 10 15 20 V DS [V] 11 Typical forward diode characteristicis IF = f(VSD) parameter: T j 103 12 Avalanche characteristics I A S= f(t AV) parameter: Tj(start) 100 Crss 25 30 102 25 °C 100 °C 10 150 °C I F [A] I AV [A] 101 25 °C 1 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD [V] 0.1 0.1 Rev. 1.1 page 6 1 10 100 1000 t AV [µs] 2010-10-05 IPD40N03S4L-08 13 Avalanche energy E AS = f(T j) parameter: I D 100 10 A 75 14 Drain-s.


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