IPD90N04S4-05

OptiMOS®-T2 Power-Transistor Features N-channel - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested IPD90N04S4-05 Product Summary V DS R DS(on),max ID 40 V 5.2 mΩ 86 A PG-TO252-3-313 Type IPD90N04S4-05 Package Marking PG-TO252-3-313 4N0405 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse2) E AS I D=45A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25°C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - Value 86 61 344 77 90 ±20 65 -55 ... +175 55/175/56 Unit A mJ A V W °C Rev. 1.0 page 1 2010-04-13 IPD90N04S4-05 Parameter Symbol Conditions Thermal characteristics2) Thermal resistance, junction - case R thJC Thermal resistance, junction ambient, leaded R thJA SMD version, device on PCB R thJA - - minimal footprint 6 cm2 cooling area3) min. Values typ. Unit max. - - 2.3 K/W - - 62 - - 62 - - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance V (BR)DSS V GS=0V, I D= 1mA V GS(th) V...