IPI80N04S4-04

OptiMOS®-T2 Power-Transistor Features N-channel - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested IPB80N04S4-04 IPI80N04S4-04, IPP80N04S4-04 Product Summary V DS R DS(on),max (SMD version) ID 40 V 4.2 mΩ 80 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80N04S4-04 IPI80N04S4-04 IPP80N04S4-04 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N0404 4N0404 4N0404 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse2) E AS I D=40A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25°C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - Value 80 80 320 100 80 ±20 71 -55 ... +175 55/175/56 Unit A mJ A V W °C Rev. 1.0 page 1 2010-04-06 IPB80N04S4-04 IPI80N04S4-04, IPP80N04S4-04 Parameter Symbol Conditions min. Values typ. Unit max. Thermal characteristics2) Thermal resistance, junction - case R thJC Thermal resistance, junction ambient, leaded R thJA - - - 2.1 K/W - - 62 SMD version, device on PCB R thJA minimal footprint 6 cm2 cooling area3) - - 62 - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown volt...