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P5N80 Datasheet, Equivalent, FQP5N80.

FQP5N80

FQP5N80

 

 

 

Part P5N80
Description FQP5N80
Feature FQP5N80 FQP5N80 800V N-Channel MOSFET September 2000 QFETTM General Descript ion These N-Channel enhancement mode po wer field effect transistors are produc ed using Fairchild’s proprietary, pla nar stripe, DMOS technology.
This advan ced technology has been especially tail ored to minimize on-state resistance, p rovide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These d evices are well suited for high efficie ncy switch mode power supply.
Features
• 4.
8A, 800V, RDS(on) = 2.
6Ω @VGS = 10 V
• Low gate charge ( typical 25 nC)
• Low Crss ( typi .
Manufacture Fairchild Semiconductor
Datasheet
Download P5N80 Datasheet
Part P5N80
Description FQP5N80
Feature FQP5N80 FQP5N80 800V N-Channel MOSFET September 2000 QFETTM General Descript ion These N-Channel enhancement mode po wer field effect transistors are produc ed using Fairchild’s proprietary, pla nar stripe, DMOS technology.
This advan ced technology has been especially tail ored to minimize on-state resistance, p rovide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These d evices are well suited for high efficie ncy switch mode power supply.
Features
• 4.
8A, 800V, RDS(on) = 2.
6Ω @VGS = 10 V
• Low gate charge ( typical 25 nC)
• Low Crss ( typi .
Manufacture Fairchild Semiconductor
Datasheet
Download P5N80 Datasheet

P5N80

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P5N80

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