Trench MOSFET. MDD1903 Datasheet

MDD1903 MOSFET. Datasheet pdf. Equivalent

MDD1903 Datasheet
Recommendation MDD1903 Datasheet
Part MDD1903
Description Single N-channel Trench MOSFET
Feature MDD1903; MDD1903 – Single N-Channel Trench MOSFET 100V Preliminary – Subject to change without notice MDD190.
Manufacture MagnaChip
Datasheet
Download MDD1903 Datasheet





MagnaChip MDD1903
Preliminary Subject to change without notice
MDD1903
Single N-channel Trench MOSFET 100V, 11A, 120
General Description
The MDD1903 uses advanced MagnaChips MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDD1903 is suitable device for DC/DC
Converters and general purpose applications.
Features
VDS = 100V
ID = 11A @VGS = 10V
RDS(ON)
< 120mΩ @VGS = 10V
< 135mΩ @VGS = 6.0V
D
G
Absolute Maximum Ratings (Tc = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (1)
Characteristics
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case (1)
TC=25oC
TC=100oC
TC=25oC
TC=100oC
S
Symbol
VDSS
VGSS
ID
IDM
PD
TJ, Tstg
Rating
100
±20
11
7.3
30
39
15
-55~150
Unit
V
V
A
A
A
W
oC
Symbol
RθJA
RθJC
Rating
52
3.2
Unit
oC/W
Jan. 2011. Version 2.0
1 MagnaChip Semiconductor Ltd.



MagnaChip MDD1903
Preliminary Subject to change without notice
Ordering Information
Part Number
MDD1903RH
Temp. Range
-55~150oC
Package
D-PAK
Packing
Tape & Reel
Rohs Status
Halogen Free
Electrical Characteristics (Tc =25oC)
Characteristics
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Drain-Source ON Resistance
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
gfs
Qg
Qgs
Qgd
Ciss
Crss
Coss
td(on)
tr
td(off)
tf
VSD
trr
Qrr
Note :
1. Surface mounted RF4 board with 2oz. Copper.
Test Condition
ID = 250μA, VGS = 0V
VDS = VGS, ID = 250μA
VDS = 80V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS = 10V, ID = 10A
VGS = 6.0V, ID = 10A
VDS = 10V, ID = 10A
VDS = 80V, ID = 10A,
VGS = 10V
VDS = 25V, VGS = 0V,
f = 1.0MHz
VDS=50V, VGS=10V,
RL=5, RGEN=3.3
IS = 10A, VGS = 0V
IF = 10A, dl/dt = 100A/μs
Min Typ
Max Unit
100 -
-
V
1.0 2.0
3.0
-- 1
μA
- - ±0.1
- 120
- 135
- 18 - S
- 11.7 20
- 1.6 - nC
- 5.3
-
- 525 830
- 27
- pF
- 63
-
- 8.4
- 11.6
- 42.6
ns
- 16.6
- 0.7 1.2 V
- 50
ns
- 77
nC
Jan. 2011. Version 2.0
2 MagnaChip Semiconductor Ltd.



MagnaChip MDD1903
Package Dimension
Preliminary Subject to change without notice
D-PAK (TO-252)
Dimensions are in millimeters, unless otherwise specified
Jan. 2011. Version 2.0
3 MagnaChip Semiconductor Ltd.





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