C2062S

www.DataSheet4U.com Transistors 2SC2062S High-gain Amplifier Transistor (32V, 0.3A) 2SC2062S zFeatures 1) Darlington connection for a high hFE. (DC current gain = 5000 (Min.) at VCE = 3V, IC = 0.1A.) 2) High input impedance. zAbsolute maximum ratings (Ta=25°C) C B zExternal dimensions (Unit : mm) SPT 4.0 2.0 (15Min.) 3.0 3Min. (1)Emitter (2)Collector (3)Base 0.45 2.5 5.0 (1) (2) (3) 0.5 0.45 Taping specifications E : Emitter C : Collector B : Base E zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Collector-base voltage Collector-emitter voltage VCBO VCES 40 32 Emitter-base voltage Collector current Collector power dissipation VEBO IC PC 12 0.3 0.3 Junction temperature Tj 150 Storage temperature Tstg −55 to +150 Unit V V V A W °C °C zElectrical characteristics (Ta=25°C) Parameter Symbol Collector-base breakdown voltage Collector-emitter breakdown voltage BVCBO BVCES Emitter-base breakdown voltage BVEBO Collector cutoff current ICBO Emitter cutoff current IEBO DC current transfer ratio hFE Collector-emitter saturation voltage VCE(sat) Transition frequency fT Output capacitance ∗ Transition frequency of the device. Cob Min. 40 32 12 − − 10000 − − − Typ. − − − − − − − 200 2.5 Max. − − − 0.1 0.1 − 1.4 − − Unit V V V µA µA − V MHz pF Conditions IC=100µA IC=10mA IE=100µA VCB=30V VEB=12V VCE/IC=3V/0.1A IC/IB=200mA/0.2mA VCE=5V , IE= −10mA , f=100MHz VCB=10V , IE=0A , f=1MHz zPackaging specifications and hFE Type 2SC...