1SS369
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
Features • Low forward voltage • Low reverse current
Applications • High...
1SS369
SILICON EPITAXIAL
SCHOTTKY BARRIER DIODE
Features Low forward voltage Low reverse current
Applications High Speed Switching
PINNING
PIN 1 2
DESCRIPTION Cathode Anode
12
SU
Top View Marking Code: "SU" Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Maximum (Peak) Reverse Voltage Reverse Voltage Average Forward Current Maximum (Peak) Forward Current Surge Forward Current (10 ms) Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range
Characteristics at Ta = 25 OC Parameter
Forward Voltage at IF = 100 mA Reverse Current at VR = 40 V Total Capacitance at f = 1 MHz
Symbol
VRM VR IO IFM IFSM Ptot TJ Topr Ts
Value 45 40 100 300 1 150 125
- 40 to + 100 - 55 to + 125
Unit V V mA mA A
mW OC OC OC
Symbol VF IR CT
Max. 0.6 5 25
Unit V µA pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 01/09/2006
1SS369
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 01/09/2006
1SS369
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD-323
A E bp
c
HE DA
UNIT A bp C D E HE
mm
1.10 0.80
0.40 0.25
0.15 1.80 0.00 1.60
1.35 2.80 1.15 2.30
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange...