1SS373

1SS373 SILICON EPITAXIAL S CHOTTKY BARRIER DIODE High Speed Switching Application Features Low forward voltage: VF = 0.23V (typ.) @IF = 5mA PINNING PIN 1 2 DESCRIPTION Cathode Anode 12 SY Absolute Maximum Ratings (T j = 25? ) Parameter Maximum (peak) Reverse Voltage Reverse Voltage Maximum (peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range Operating Temperature Range Top View Marking Code: "SY" Simplified outline SOD-323 and symbol Symbol VRM VR IFM IO IFSM Ptot TJ Ts Topr Value 15 10 200 100 1 150 125 -55 to +125 -40 to +100 Unit V V mA mA A mW ? ? ? Characteristics at T j = 25 ? Parameter Forward Voltage Reverse Current Total Capacitance Test Conditions IF = 1mA IF = 5mA IF = 100mA VR = 10V f = 1MHZ Symbol VF VF VF IR CT Min - Typ 0.18 0.23 0.35 20 Max - 0.30 0.50 20 40 Unit V V V µA pF РАДИОТЕХ-ТРЕЙД Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: [email protected] Веб: www.rct.ru ® 1SS373 SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, acompany listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 30/10/2004 1SS373 PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-323 A UNIT A b c D E H mm 1.10 0.40 0.15 1.80 1.35 2.80 0.80 0.25 0.00 1.60 1.15 2.30 SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, acompany listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 30...