1SS388

1SS388 FEATURES : * Small package * Low forward voltage * Low revese current * Pb / RoHS Free MECHANICAL DATA : * Lesd Finish : 100% Matte Sn (Tin) * Mounting Position : Any * Qualified Max Reflow Temperature : 260 °C Absolute Maximum Ratings (Ta = 25 °C) Parameter Maximum Peak Reverse Voltage Maximum Reverse Voltage Maximum Average Forward Current Maximum Peak Forward Current Maximum Surge Current (10 ms) Power Dissipation Junction Temperature Storage Temperature Range Electrical Characteristics (Ta = 25 °C) Parameter Forward Voltage Reverse Current Total Capacitance Symbol VF IR CT Certificate : TH97/10561QM Certificate : TW00/17276EM SILICON EPITAXIAL SCHOTTKY BARRER DIODE SOD-523 1.25 1.15 0.8 0.70 5 0.60 0.7 0.4 0.135 0.3 0.127 1.65 1.55 Dimensions in millimeters Symbol VRM VR IF IFM IFSM Ptot TJ TSTG Value 45 40 100 300 1.0 150 125 -55 to + 125 Unit V V mA mA A mW °C °C Test Condition IF = 50 mA VR = 10 V f = 1MHz Max. 0.6 5 25 Unit V μA pF Page 1 of 2 Rev. 00 : May 7, 2007 POWER DISSIPATION, (mW) Certificate : TH97/10561QM Certificate : TW00/17276EM RATING AND CHARACTERISTIC CURVES ( 1SS388 ) FIG.1 - POWER DISSIPATION VS. AMBIENT TEMPERATURE 150 120 90 60 30 0 0 25 50 75 100 AMBIENT TEMPERATURE, ( °C) 125 TOTAL CAPACITANCE, (pF) FIG.2 - TOTAL CAPACITANCE VS. REVERSE VOLTAGE 100 10 1 0 4 8 12 16 20 24 28 32 36 REVERSE VOLTAGE, (V) FIG.3 - TYPICAL FORWARD CHARACTERISTICS 1000 100 10 1 Ta = 25 °C 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 FORWARD VO...