(PDF) AM9569S Datasheet PDF | AXElite





AM9569S Datasheet PDF

Part Number AM9569S
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Manufacture AXElite
Total Page 5 Pages
PDF Download Download AM9569S Datasheet PDF

Features: Datasheet pdf GOFO TEL 0755-8398 3377 135 9011 2223 ht tp://www.gofotech.com AM9569S P-CHANN EL ENHANCEMENT MODE POWER MOSFET ▼ S imple Drive Requirement ▼ Fast Switch ing Characteristic ▼ RoHS Compliant D escription The Advanced Power MOSFETs f rom Axelite provide the designer with t he best combination of fast switching, ruggedized device design, low on-resist ance and cost-effectiveness. The SO-8 p ackage is universally preferred for all commercial-industrial surface mount ap plications and suited for low voltage a pplications such as DC/DC converters. BVDSS RDS(ON) ID D D D D SO-8 G Absolu te Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@ TA=25℃ Drain-Source Voltage Gate-Sou rce Voltage Continuous Drain Current3 C ontinuous Drain Current3 Pulsed Drain C urrent1 Total Power Dissipation Linear Derating Factor TSTG Storage Temperat ure Range TJ Operating Junction Temper ature Range Thermal Data Symbol Rthj- a Parameter Thermal Resistance Junction-ambient3 Rating -40 ± 20 -4.2 -3..

Keywords: AM9569S, datasheet, pdf, AXElite, P-CHANNEL, ENHANCEMENT, MODE, POWER, MOSFET, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

AM9569S datasheet
GOFO
TEL 0755-8398 3377 135 9011 2223
http://www.gofotech.com
AM9569S
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement
Fast Switching Characteristic
RoHS Compliant
Description
The Advanced Power MOSFETs from Axelite provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
BVDSS
RDS(ON)
ID
D
D
D
D
SO-8
G
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Rating
-40
± 20
-4.2
-3.4
-40
2.5
0.02
-55 to 150
-55 to 150
Max.
Value
50
-40V
90mΩ
-4.2A
G
SS
S
D
S
Units
V
V
A
A
A
W
W/
Unit
/W
1/5
Axelite Confidential Materials, do not copy or distribute without written consent.
Rev.1.0 May. 25, 2011

AM9569S datasheet
GOFO
TEL 0755-8398 3377 135 9011 2223
http://www.gofotech.com
AM9569S
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA
Static Drain-Source On-Resistance2 VGS=-10V, ID=-4A
VGS=-4.5V, ID=-2A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=VGS, ID=-250uA
VDS=-10V, ID=-4A
VDS=-40V, VGS=0V
VDS=-32V, VGS=0V
VGS=± 20V
ID=-4A
VDS=-30V
VGS=-4.5V
VDS=-20V
ID=-1A
RG=3.3Ω,VGS=-10V
RD=20Ω
VGS=0V
VDS=-25V
f=1.0MHz
Gate Resistance
f=1.0MHz
-40 - - V
- -0.02 - V/
- - 90 mΩ
- - 130 mΩ
-1 - -3 V
-5-S
- - -1 uA
- - -25 uA
- - ±100 nA
- 8 13 nC
- 1.6 - nC
- 4 - nC
- 9 - ns
- 5 - ns
- 23 - ns
- 5 - ns
- 500 800 pF
- 80 - pF
- 65 - pF
- 6 9Ω
Source-Drain Diode
Symbol
VSD
trr
Parameter
Forward On Voltage2
Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=-1.9A, VGS=0V
IS=-4A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - -1.3 V
- 26 - ns
- 25 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 /W when mounted on Min. copper pad.
2/5
Axelite Confidential Materials, do not copy or distribute without written consent.
Rev.1.0 May. 25, 2011




Index : 0  1  2  3   4  5  6  7   8  9  A  B   C  D  E  F   G  H  I  J   K  L  M  N   O  P  Q  R   S  T  U  V   W  X  Y  Z
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)