PMEG6030EP

PMEG6030EP 3 A low VF MEGA Schottky barrier rectifier Rev. 01 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead Surface-Mounted Device (SMD) plastic package. 1.2 Features „ Average forward current: IF(AV) ≤ 3 A „ Reverse voltage: VR ≤ 60 V „ Low forward voltage „ High power capability due to clip-bond technology „ AEC-Q101 qualified „ Small and flat lead SMD plastic package 1.3 Applications „ Low voltage rectification „ High efficiency DC-to-DC conversion „ Switch Mode Power Supply (SMPS) „ Reverse polarity protection „ Low power consumption applications 1.4 Quick reference data Table 1. Quick reference data Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max IF(AV) average forward current square wave; δ = 0.5; f = 20 kHz Tamb ≤ 50 °C [1] - - 3 Tsp ≤ 135 °C --3 VR reverse voltage - - 60 VF forward voltage IF = 3 A - 460 530 IR reverse current VR = 60 V - 80 200 [1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. Unit A A V mV μA NXP Semiconductors PMEG6030EP 3 A low VF MEGA Schottky barrier rectifier 2. Pinning information Table 2. Pin 1 2 Pinning Description cathode anode [1] The marking bar indicates the cathode. 3. Ordering information Simplified outline [1] 12 Graphic s...