Power-Transistor. IPB180N06S4-H1 Datasheet

IPB180N06S4-H1 Datasheet PDF


Part

IPB180N06S4-H1

Description

Power-Transistor

Manufacture

Infineon

Page 9 Pages
Datasheet
Download IPB180N06S4-H1 Datasheet


IPB180N06S4-H1 Datasheet
OptiMOS®-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
• Ultra low RDSon
• Ultra high ID
IPB180N06S4-H1
Product Summary
V DS
R DS(on),max
ID
60 V
1.7 m
180 A
PG-TO263-7-3
Type
IPB180N06S4-H1
Package
PG-TO263-7-3
Marking
4N06H1
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse2) E AS I D=90A
Avalanche current, single pulse I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
180
180
720
700
180
±20
250
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2009-03-25

IPB180N06S4-H1 Datasheet
IPB180N06S4-H1
Parameter
Symbol
Conditions
Thermal characteristics2)
Thermal resistance, junction - case
SMD version, device on PCB
R thJC
R thJA
-
minimal footprint
6 cm2 cooling area3)
min.
Values
typ.
Unit
max.
- - 0.60 K/W
- - 62
- - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0V, I D= 1mA
60 -
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=200µA
2.0
3.0
4.0
Zero gate voltage drain current
I DSS
V DS=60V, V GS=0V,
T j=25°C
- 0.03 1 µA
Gate-source leakage current
Drain-source on-state resistance
V DS=60V, V GS=0V,
T j=125°C2)
I GSS
V GS=20V, V DS=0V
R DS(on) V GS=10V, I D=100A
- 10 200
- - 100 nA
- 1.3 1.7 m
Rev. 1.0
page 2
2009-03-25


Features Datasheet pdf OptiMOS®-T2 Power-Transistor Features N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C p eak reflow • 175°C operating tempera ture • Green Product (RoHS compliant) • 100% Avalanche tested • Ultra lo w RDSon • Ultra high ID IPB180N06S4- H1 Product Summary V DS R DS(on),max I D 60 V 1.7 mΩ 180 A PG-TO263-7-3 Ty pe IPB180N06S4-H1 Package PG-TO263-7-3 Marking 4N06H1 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuo us drain current1) I D T C=25°C, V GS =10V T C=100°C, V GS=10V2) Pulsed dr ain current2) I D,pulse T C=25°C Ava lanche energy, single pulse2) E AS I D= 90A Avalanche current, single pulse I AS - Gate source voltage V GS - Pow er dissipation P tot T C=25°C Operat ing and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - Value 180 180 720 700 180 ±20 25 0 -55 ... +175 55/175/56 Unit A mJ A V W °C Rev. 1.0 page 1 2009-03-25 IPB180N06S4-H1 Parameter Symbol Conditions Therma.
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