Part Number

IPB120N06S4-H1

Description

Power-Transistor

Manufacture

Infineon

Total Page 9 Pages
PDF Download
Download IPB120N06S4-H1 Datasheet PDF


Features Datasheet pdf OptiMOS®-T2 Power-Transistor Features N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C p eak reflow • 175°C operating tempera ture • Green Product (RoHS compliant) • 100% Avalanche tested IPB120N06S4 -H1 IPI120N06S4-H1, IPP120N06S4-H1 Pro duct Summary V DS R DS(on),max (SMD ver sion) ID 60 V 2.1 mΩ 120 A PG-TO263 -3-2 PG-TO262-3-1 PG-TO220-3-1 Type IP B120N06S4-H1 IPI120N06S4-H1 IPP120N06S4 -H1 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N06H1 4N06H1 4N0 6H1 Maximum ratings, at T j=25 °C, un less otherwise specified Parameter Sy mbol Conditions Continuous drain curr ent1) I D T C=25°C, V GS=10V T C=100 °C, V GS=10V2) Pulsed drain current2) I D,pulse T C=2.
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IPB120N06S4-H1 Datasheet
OptiMOS®-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPB120N06S4-H1
IPI120N06S4-H1, IPP120N06S4-H1
Product Summary
V DS
R DS(on),max (SMD version)
ID
60 V
2.1 m
120 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB120N06S4-H1
IPI120N06S4-H1
IPP120N06S4-H1
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
4N06H1
4N06H1
4N06H1
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse2) E AS I D=60A
Avalanche current, single pulse I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1
-
Value
120
120
480
1060
120
±20
250
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2009-03-23




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