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IPI120N06S4-03 Dataheets PDF



Part Number IPI120N06S4-03
Manufacturers Infineon
Logo Infineon
Description Power-Transistor
Datasheet IPI120N06S4-03 DatasheetIPI120N06S4-03 Datasheet (PDF)

OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPB120N06S4-03 IPI120N06S4-03, IPP120N06S4-03 Product Summary V DS R DS(on),max (SMD version) ID 60 V 2.8 mΩ 120 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB120N06S4-03 IPI120N06S4-03 IPP120N06S4-03 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N0603 4N0603 4N0603 Maxi.

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OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPB120N06S4-03 IPI120N06S4-03, IPP120N06S4-03 Product Summary V DS R DS(on),max (SMD version) ID 60 V 2.8 mΩ 120 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB120N06S4-03 IPI120N06S4-03 IPP120N06S4-03 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N0603 4N0603 4N0603 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse2) E AS I D=60A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25°C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - Value 120 120 480 392 120 ±20 167 -55 ... +175 55/175/56 Unit A mJ A V W °C Rev. 1.0 page 1 2009-03-23 IPB120N06S4-03 IPI120N06S4-03, IPP120N06S4-03 Parameter Symbol Conditions min. Values typ. Unit max. Thermal characteristics2) Thermal resistance, junction - case R thJC Thermal resistance, junction ambient, leaded R thJA - - - 0.9 K/W - - 62 SMD version, device on PCB R thJA minimal footprint 6 cm2 cooling area3) - - 62 - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= 1mA 60 - -V Gate threshold voltage V GS(th) V DS=V GS, I D=120µA 2.0 3.0 4.0 Zero gate voltage drain current I DSS V DS=60V, V GS=0V, T j=25°C - 0.01 1 µA Gate-source leakage current Drain-source on-state resistance V DS=60V, V GS=0V, T j=125°C2) I GSS V GS=20V, V DS=0V R DS(on) V GS=10V, I D=100A - 10 200 - - 100 nA - 2.6 3.2 mΩ V GS=10V, I D=100A, SMD version - 2.3 2.8 Rev. 1.0 page 2 2009-03-23 Parameter Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current2) Diode pulse current2) Diode forward voltage Reverse recovery time2) Symbol IPB120N06S4-03 IPI120N06S4-03, IPP120N06S4-03 Conditions min. Values typ. Unit max. C iss C oss Crss t d(on) tr t d(off) tf V GS=0V, V DS=25V, f =1MHz V DD=30V, V GS=10V, I D=120A, R G=3.5Ω - 10120 13150 pF - 2480 3220 - 100 200 - 40 - ns - 10 - 80 - 15 - Q gs Q gd Qg V plateau V DD=48V, I D=120A, V GS=0 to 10V - 54 70 nC - 13.5 27 - 125 160 - 5.3 - V IS I S,pulse V SD T C=25°C V GS=0V, I F=100A, T j=25°C t rr V R=30V, I F=120A, di F/dt =100A/µs - - 120 A - - 480 0.6 0.95 1.3 V - 115 - ns Reverse recovery charge2) Q rr - 110 - nC 1) Current is limited by bondwire; with an R thJC = 0.9K/W the chip is able to carry 181A at 25°C. 2) Specified by design. Not subject to production test. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2009-03-23 1 Power dissipation P tot = f(T C); V GS ≥ 6 V IPB120N06S4-03 IPI120N06S4-03, IPP120N06S4-03 2 Drain current I D = f(T C); V GS ≥ 6 V; SMD 180 140 160 120 140 100 120 100 80 P tot [W] I D [A] 80 60 60 40 40 20 20 00 0 50 100 150 200 0 50 100 150 T C [°C] T C [°C] 3 Safe operating area I D = f(V DS); T C = 25 °C; D = 0; SMD parameter: t p 1000 4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T 101 1 µs I D [A] Z thJC [K/W] 100 10 10 µs 100 µs 1 ms 100 0.5 10-1 0.1 0.05 10-2 0.01 200 single pulse 1 0.1 1 10 V DS [V] 100 10-3 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] Rev. 1.0 page 4 2009-03-23 I D [A] R DS(on) [mΩ] 5 Typ. output characteristics I D = f(V DS); T j = 25 °C; SMD parameter: V GS 480 10 V 8 V 7 V 400 320 240 160 80 0 01234 V DS [V] 7 Typ. transfer characteristics I D = f(V GS); V DS = 6V parameter: T j 480 IPB120N06S4-03 IPI120N06S4-03, IPP120N06S4-03 6 Typ. drain-source on-state resistance R DS(on) = f(I D); T j = 25 °C; SMD parameter: V GS 10 5V 9 6V 8 7 6 6V 5 4 7V 3 5V 2 8V 10 V 56 1 0 80 160 240 320 400 480 I D [A] 8 Typ. drain-source on-state resistance R DS(on) = f(T j); I D = 100 A; V GS = 10 V; SMD 5 4.5 400 4 320 3.5 240 3 I D [A] R DS(on) [mΩ] 160 80 0 3 175 °C 25 °C -55 °C 45 V GS [V] 6 2.5 2 1.5 7 1 -60 -20 20 60 100 140 180 T j [°C] Rev. 1.0 page 5 2009-03-23 9 Typ. gate threshold voltage V GS(th) = f(T j); V GS = V DS parameter: I D 4 IPB120N06S4-03 IPI120N06S4-03, IPP120N06S4-03 10 Typ. capacitances C = f(V DS); V GS = 0 V; f = 1 MHz 105 V GS(th) [V] C [pF] 3.5 1200 µA 3 120 µA 2.5 2 104 103 102 Ciss Coss Crss 1.5 -60 -20 20 60 100 140 180 T j [°C] 110011 0 5 10 15 20 25 30 V D.


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