IPP120N06S4-02 Datasheet PDF


Part Number

IPP120N06S4-02

Description

Power-Transistor

Manufacture

Infineon

Total Page 9 Pages
PDF Download
Download IPP120N06S4-02 Datasheet PDF


Features Datasheet pdf OptiMOS®-T2 Power-Transistor Features N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak r eflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPB120N06S4-02 I PI120N06S4-02, IPP120N06S4-02 Product Summary V DS R DS(on),max (SMD version) ID 60 V 2.4 mΩ 120 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB120N 06S4-02 IPI120N06S4-02 IPP120N06S4-02 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO 220-3-1 Marking 4N0602 4N0602 4N0602 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) I D,pulse T C=25°C .
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IPP120N06S4-02 Datasheet
OptiMOS®-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPB120N06S4-02
IPI120N06S4-02, IPP120N06S4-02
Product Summary
V DS
R DS(on),max (SMD version)
ID
60 V
2.4 m
120 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB120N06S4-02
IPI120N06S4-02
IPP120N06S4-02
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
4N0602
4N0602
4N0602
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse2) E AS I D=60A
Avalanche current, single pulse
I AS
Gate source voltage
V GS
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
120
120
480
560
120
±20
188
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.2
Downloaded from Elcodis.com electronic components distributor
page 1
2009-07-01




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