IPP90N06S4L-04 Datasheet PDF


Part Number

IPP90N06S4L-04

Description

Power-Transistor

Manufacture

Infineon

Total Page 9 Pages
PDF Download
Download IPP90N06S4L-04 Datasheet PDF


Features Datasheet pdf OptiMOS®-T2 Power-Transistor Features N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C p eak reflow • 175°C operating tempera ture • Green Product (RoHS compliant) • 100% Avalanche tested IPB90N06S4L -04 IPI90N06S4L-04, IPP90N06S4L-04 Pro duct Summary V DS R DS(on),max (SMD ver sion) ID 60 V 3.4 mΩ 90 A PG-TO263- 3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB 90N06S4L-04 IPI90N06S4L-04 IPP90N06S4L- 04 Package PG-TO263-3-2 PG-TO262-3-1 P G-TO220-3-1 Marking 4N06L04 4N06L04 4N 06L04 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain cu rrent1) I D T C=25°C, V GS=10V T C=1 00°C, V GS=10V2) Pulsed drain current2) I D,pulse T C.
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IPP90N06S4L-04 Datasheet
OptiMOS®-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPB90N06S4L-04
IPI90N06S4L-04, IPP90N06S4L-04
Product Summary
V DS
R DS(on),max (SMD version)
ID
60 V
3.4 m
90 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB90N06S4L-04
IPI90N06S4L-04
IPP90N06S4L-04
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
4N06L04
4N06L04
4N06L04
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse2) E AS I D=45A
Avalanche current, single pulse I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1
-
Value
90
90
360
331
90
±16
150
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2009-03-24




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