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IPI80N06S4-07 Dataheets PDF



Part Number IPI80N06S4-07
Manufacturers Infineon
Logo Infineon
Description Power-Transistor
Datasheet IPI80N06S4-07 DatasheetIPI80N06S4-07 Datasheet (PDF)

OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPB80N06S4-07 IPI80N06S4-07, IPP80N06S4-07 Product Summary V DS R DS(on),max (SMD version) ID 60 V 7.1 mΩ 80 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80N06S4-07 IPI80N06S4-07 IPP80N06S4-07 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N0607 4N0607 4N0607 Maximum rat.

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OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPB80N06S4-07 IPI80N06S4-07, IPP80N06S4-07 Product Summary V DS R DS(on),max (SMD version) ID 60 V 7.1 mΩ 80 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80N06S4-07 IPI80N06S4-07 IPP80N06S4-07 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N0607 4N0607 4N0607 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V1) T C=100°C, V GS=10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse2) E AS I D=40A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25°C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - Value 80 58 320 71 80 ±20 79 -55 ... +175 55/175/56 Unit A mJ A V W °C Rev. 1.0 page 1 2009-03-24 IPB80N06S4-07 IPI80N06S4-07, IPP80N06S4-07 Parameter Symbol Conditions min. Values typ. Unit max. Thermal characteristics2) Thermal resistance, junction - case R thJC Thermal resistance, junction ambient, leaded R thJA - - - 1.9 K/W - - 62 SMD version, device on PCB R thJA minimal footprint 6 cm2 cooling area3) - - 62 - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance V (BR)DSS V GS=0V, I D= 1mA V GS(th) V DS=V GS, I D=40µA I DSS V DS=60V, V GS=0V V DS=60V, V GS=0V, T j=125°C2) I GSS R DS(on) V GS=20V, V DS=0V V GS=10V, I D=80A V GS=10V, I D=80A, SMD version 60 - -V 2.0 3.0 4.0 - 0.01 1 µA - 5 100 - - 100 nA - 6.2 7.4 mΩ - 5.9 7.1 Rev. 1.0 page 2 2009-03-24 Parameter Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current2) Diode pulse current2) Diode forward voltage Reverse recovery time2) Symbol Conditions IPB80N06S4-07 IPI80N06S4-07, IPP80N06S4-07 min. Values typ. Unit max. C iss C oss Crss V GS=0V, V DS=25V, f =1MHz - 3460 4500 pF - 850 1105 - 35 70 t d(on) - 15 - ns tr V DD=30V, V GS=10V, - 3 - t d(off) I D=80A, R G=3.5Ω - 23 - tf - 5 - Q gs Q gd Qg V plateau V DD=48V, I D=80A, V GS=0 to 10V - 21 27 nC - 5.5 11 - 43 56 - 6.0 - V IS I S,pulse V SD T C=25°C V GS=0V, I F=80A, T j=25°C t rr V R=30V, I F=50A, di F/dt =100A/µs - - 80 A - - 320 0.6 0.95 1.3 V - 39 - ns Reverse recovery charge2) Q rr - 38 - nC 1) Current is limited by bondwire; with an R thJC = 1.9K/W the chip is able to carry 82A at 25°C. 2) Specified by design. Not subject to production test. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2009-03-24 P tot [W] I D [A] 1 Power dissipation P tot = f(T C); V GS ≥ 6 V 90 80 70 60 50 40 30 20 10 0 0 50 100 150 T C [°C] 3 Safe operating area I D = f(V DS); T C = 25 °C; D = 0; SMD parameter: t p 1000 IPB80N06S4-07 IPI80N06S4-07, IPP80N06S4-07 2 Drain current I D = f(T C); V GS ≥ 6 V; SMD 100 80 60 40 20 0 200 0 50 100 150 T C [°C] 4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T 101 200 I D [A] Z thJC [K/W] 100 10 1 µs 10 µs 100 µs 1 ms 0.5 100 0.1 10-1 0.05 0.01 10-2 single pulse 1 0.1 Rev. 1.0 1 10 V DS [V] 100 10-3 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 4 2009-03-24 I D [A] R DS(on) [mΩ] 5 Typ. output characteristics I D = f(V DS); T j = 25 °C; SMD parameter: V GS 320 10 V 280 240 200 160 120 80 40 IPB80N06S4-07 IPI80N06S4-07, IPP80N06S4-07 6 Typ. drain-source on-state resistance R DS(on) = f(I D); T j = 25 °C; SMD parameter: V GS 17 5V 6V 7V 8 V 15 13 7V 11 9 6V 7 5V 8V 10 V 0 012345 V DS [V] 7 Typ. transfer characteristics I D = f(V GS); V DS = 6V parameter: T j 320 -55 °C 280 5 60 80 160 240 I D [A] 8 Typ. drain-source on-state resistance R DS(on) = f(T j); I D = 80 A; V GS = 10 V; SMD 12 320 240 25 °C 10 200 I D [A] R DS(on) [mΩ] 160 175 °C 8 120 80 6 40 0 2345678 V GS [V] 4 -60 -20 20 60 100 140 180 T j [°C] Rev. 1.0 page 5 2009-03-24 V GS(th) [V] C [pF] 9 Typ. gate threshold voltage V GS(th) = f(T j); V GS = V DS parameter: I D 4 3.5 3 400 µA 40 µA 2.5 2 IPB80N06S4-07 IPI80N06S4-07, IPP80N06S4-07 10 Typ. capacitances C = f(V DS); V GS = 0 V; f = 1 MHz 104 Ciss 103 Coss 102 1.5 Crss 1 -60 -20 20 60 100 140 180 T j [°C] 101 0 5 10 15 20 25 30 V DS [V] 11 Typical forward diode characteristicis IF = f(VSD) parameter: T j 103 12 Avalanche charact.


IPB80N06S4-07 IPI80N06S4-07 IPP80N06S4-07


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