Power-Transistor. IPI80N06S4-07 Datasheet

IPI80N06S4-07 Datasheet PDF


Part

IPI80N06S4-07

Description

Power-Transistor

Manufacture

Infineon

Page 9 Pages
Datasheet
Download IPI80N06S4-07 Datasheet


IPI80N06S4-07 Datasheet
OptiMOS®-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPB80N06S4-07
IPI80N06S4-07, IPP80N06S4-07
Product Summary
V DS
R DS(on),max (SMD version)
ID
60 V
7.1 m
80 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB80N06S4-07
IPI80N06S4-07
IPP80N06S4-07
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
4N0607
4N0607
4N0607
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V1)
T C=100°C, V GS=10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse2) E AS I D=40A
Avalanche current, single pulse I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1
-
Value
80
58
320
71
80
±20
79
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2009-03-24

IPI80N06S4-07 Datasheet
IPB80N06S4-07
IPI80N06S4-07, IPP80N06S4-07
Parameter
Symbol
Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient, leaded
R thJA
-
-
- - 1.9 K/W
- - 62
SMD version, device on PCB
R thJA
minimal footprint
6 cm2 cooling area3)
-
-
- 62
- 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
V (BR)DSS V GS=0V, I D= 1mA
V GS(th) V DS=V GS, I D=40µA
I DSS
V DS=60V, V GS=0V
V DS=60V, V GS=0V,
T j=125°C2)
I GSS
R DS(on)
V GS=20V, V DS=0V
V GS=10V, I D=80A
V GS=10V, I D=80A,
SMD version
60 -
-V
2.0 3.0 4.0
- 0.01 1 µA
- 5 100
- - 100 nA
- 6.2 7.4 m
- 5.9 7.1
Rev. 1.0
page 2
2009-03-24


Features Datasheet pdf OptiMOS®-T2 Power-Transistor Features N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C p eak reflow • 175°C operating tempera ture • Green Product (RoHS compliant) • 100% Avalanche tested IPB80N06S4- 07 IPI80N06S4-07, IPP80N06S4-07 Produc t Summary V DS R DS(on),max (SMD versio n) ID 60 V 7.1 mΩ 80 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80N 06S4-07 IPI80N06S4-07 IPP80N06S4-07 Pa ckage PG-TO263-3-2 PG-TO262-3-1 PG-TO22 0-3-1 Marking 4N0607 4N0607 4N0607 Ma ximum ratings, at T j=25 °C, unless ot herwise specified Parameter Symbol C onditions Continuous drain current I D T C=25°C, V GS=10V1) T C=100°C, V GS=10V2) Pulsed drain current2) I D,p ulse T C=25°C Avalanche energy, singl e pulse2) E AS I D=40A Avalanche curre nt, single pulse I AS - Gate source vo ltage V GS - Power dissipation P to t T C=25°C Operating and storage temp erature T j, T stg - IEC climatic cate gory; DIN IEC 68-1 - Value 80 58 320 71 80 ±20 79 -55 ... +175 55/175/56 Unit A mJ.
Keywords IPI80N06S4-07, datasheet, pdf, Infineon, Power-Transistor, PI80N06S4-07, I80N06S4-07, 80N06S4-07, IPI80N06S4-0, IPI80N06S4-, IPI80N06S4, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)