Document
OptiMOS®-T2 Power-Transistor
Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested
IPB80N06S4-07 IPI80N06S4-07, IPP80N06S4-07
Product Summary V DS R DS(on),max (SMD version) ID
60 V 7.1 mΩ 80 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type IPB80N06S4-07 IPI80N06S4-07 IPP80N06S4-07
Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Marking 4N0607 4N0607 4N0607
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V1)
T C=100°C, V GS=10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse2) E AS I D=40A
Avalanche current, single pulse I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1
-
Value 80
58
320 71 80 ±20 79 -55 ... +175 55/175/56
Unit A
mJ A V W °C
Rev. 1.0
page 1
2009-03-24
IPB80N06S4-07 IPI80N06S4-07, IPP80N06S4-07
Parameter
Symbol
Conditions
min.
Values typ.
Unit max.
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction ambient, leaded
R thJA
-
- - 1.9 K/W - - 62
SMD version, device on PCB
R thJA
minimal footprint 6 cm2 cooling area3)
-
- 62 - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current
Gate-source leakage current Drain-source on-state resistance
V (BR)DSS V GS=0V, I D= 1mA
V GS(th) V DS=V GS, I D=40µA
I DSS
V DS=60V, V GS=0V
V DS=60V, V GS=0V, T j=125°C2)
I GSS R DS(on)
V GS=20V, V DS=0V V GS=10V, I D=80A
V GS=10V, I D=80A, SMD version
60 -
-V
2.0 3.0 4.0
- 0.01 1 µA
- 5 100
- - 100 nA - 6.2 7.4 mΩ
- 5.9 7.1
Rev. 1.0
page 2
2009-03-24
Parameter
Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage
Reverse Diode Diode continous forward current2) Diode pulse current2)
Diode forward voltage
Reverse recovery time2)
Symbol
Conditions
IPB80N06S4-07 IPI80N06S4-07, IPP80N06S4-07
min.
Values typ.
Unit max.
C iss C oss Crss
V GS=0V, V DS=25V, f =1MHz
- 3460 4500 pF - 850 1105 - 35 70
t d(on)
- 15 - ns
tr
V DD=30V, V GS=10V,
-
3
-
t d(off)
I D=80A, R G=3.5Ω
- 23 -
tf - 5 -
Q gs Q gd Qg V plateau
V DD=48V, I D=80A, V GS=0 to 10V
- 21 27 nC - 5.5 11 - 43 56 - 6.0 - V
IS I S,pulse
V SD
T C=25°C
V GS=0V, I F=80A, T j=25°C
t rr
V R=30V, I F=50A, di F/dt =100A/µs
- - 80 A - - 320 0.6 0.95 1.3 V
- 39 - ns
Reverse recovery charge2)
Q rr
- 38 - nC
1) Current is limited by bondwire; with an R thJC = 1.9K/W the chip is able to carry 82A at 25°C.
2) Specified by design. Not subject to production test. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
Rev. 1.0
page 3
2009-03-24
P tot [W] I D [A]
1 Power dissipation P tot = f(T C); V GS ≥ 6 V
90
80 70
60
50 40
30
20 10
0 0 50 100 150 T C [°C]
3 Safe operating area I D = f(V DS); T C = 25 °C; D = 0; SMD parameter: t p
1000
IPB80N06S4-07 IPI80N06S4-07, IPP80N06S4-07
2 Drain current I D = f(T C); V GS ≥ 6 V; SMD
100
80
60
40
20
0 200 0 50 100 150
T C [°C]
4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T
101
200
I D [A] Z thJC [K/W]
100 10
1 µs 10 µs 100 µs
1 ms
0.5
100
0.1
10-1
0.05
0.01
10-2 single pulse
1 0.1
Rev. 1.0
1 10 V DS [V]
100
10-3 10-6
10-5
10-4
10-3
10-2
10-1
100
t p [s]
page 4
2009-03-24
I D [A] R DS(on) [mΩ]
5 Typ. output characteristics I D = f(V DS); T j = 25 °C; SMD parameter: V GS
320
10 V
280
240
200
160
120
80
40
IPB80N06S4-07 IPI80N06S4-07, IPP80N06S4-07
6 Typ. drain-source on-state resistance R DS(on) = f(I D); T j = 25 °C; SMD parameter: V GS
17
5V
6V
7V
8 V 15
13
7V
11
9
6V
7
5V
8V 10 V
0 012345 V DS [V]
7 Typ. transfer characteristics I D = f(V GS); V DS = 6V parameter: T j
320
-55 °C
280
5 60
80 160 240 I D [A]
8 Typ. drain-source on-state resistance R DS(on) = f(T j); I D = 80 A; V GS = 10 V; SMD
12
320
240
25 °C
10
200
I D [A] R DS(on) [mΩ]
160
175 °C
8
120
80 6 40
0 2345678 V GS [V]
4 -60 -20 20 60 100 140 180
T j [°C]
Rev. 1.0
page 5
2009-03-24
V GS(th) [V] C [pF]
9 Typ. gate threshold voltage V GS(th) = f(T j); V GS = V DS parameter: I D
4
3.5
3 400 µA
40 µA
2.5
2
IPB80N06S4-07 IPI80N06S4-07, IPP80N06S4-07
10 Typ. capacitances C = f(V DS); V GS = 0 V; f = 1 MHz
104
Ciss
103
Coss
102
1.5 Crss
1 -60 -20 20 60 100 140 180 T j [°C]
101 0
5 10 15 20 25 30 V DS [V]
11 Typical forward diode characteristicis IF = f(VSD) parameter: T j
103
12 Avalanche charact.