(PDF) IPD90N06S4L-05 Datasheet PDF | Infineon





IPD90N06S4L-05 Datasheet PDF

Part Number IPD90N06S4L-05
Description Power-Transistor
Manufacture Infineon
Total Page 9 Pages
PDF Download Download IPD90N06S4L-05 Datasheet PDF

Features: Datasheet pdf OptiMOS®-T2 Power-Transistor Features N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C p eak reflow • 175°C operating tempera ture • Green Product (RoHS compliant) • 100% Avalanche tested • Ultra lo w RDSon IPD90N06S4L-05 Product Summar y V DS R DS(on),max ID 60 V 4.6 mΩ 9 0 A PG-TO252-3-11 Type IPD90N06S4L-05 Package Marking PG-TO252-3-11 4N06L 05 Maximum ratings, at T j=25 °C, unl ess otherwise specified Parameter Sym bol Conditions Continuous drain curre nt I D T C=25°C, V GS=10V1) T C=100 C, V GS=10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse2) E AS I D=45A Avalanche current, single pulse I AS - Gate sou rce voltage V GS - Power dissipation P tot T C=25°C Operating and storag e temperature T j, T stg - IEC climati c category; DIN IEC 68-1 - - Value 90 80 360 135 90 ±16 107 -55 ... +175 55 /175/56 Unit A mJ A V W °C − Rev. 1.0 page 1 2009-03-24 IPD90N06S4L-05 Parameter Symbol Conditions Thermal characteris.

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IPD90N06S4L-05 datasheet
OptiMOS®-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
• Ultra low RDSon
IPD90N06S4L-05
Product Summary
V DS
R DS(on),max
ID
60 V
4.6 m
90 A
PG-TO252-3-11
Type
IPD90N06S4L-05
Package
Marking
PG-TO252-3-11 4N06L05
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V1)
T C=100°C, V GS=10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse2) E AS I D=45A
Avalanche current, single pulse I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
90
80
360
135
90
±16
107
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2009-03-24

IPD90N06S4L-05 datasheet
IPD90N06S4L-05
Parameter
Symbol
Conditions
Thermal characteristics2)
Thermal resistance, junction - case
SMD version, device on PCB
R thJC
R thJA
-
minimal footprint
6 cm2 cooling area3)
min.
Values
typ.
Unit
max.
- - 1.4 K/W
- - 62
- - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
V (BR)DSS V GS=0V, I D= 1mA
V GS(th) V DS=V GS, I D=60µA
I DSS
V DS=60V, V GS=0V,
T j=25°C
V DS=60V, V GS=0V,
T j=125°C2)
I GSS
V GS=16V, V DS=0V
R DS(on) V GS=4.5V, I D=45A
V GS=10V, I D=90A
60 -
-V
1.2 1.7 2.2
- 0.01 1 µA
- 5 100
- - 100 nA
- 5.3 8.0 m
- 3.7 4.6
Rev. 1.0
page 2
2009-03-24




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