(PDF) IXGX50N60A2D1 Datasheet PDF | IXYS Corporation





IXGX50N60A2D1 Datasheet PDF

Part Number IXGX50N60A2D1
Description IGBT
Manufacture IXYS Corporation
Total Page 6 Pages
PDF Download Download IXGX50N60A2D1 Datasheet PDF

Features: Datasheet pdf Advance Technical Data IGBT with Diode IXGK 50N60A2D1 IXGX 50N60A2D1 V I CES VC25 CE(sat) = 600 V = 75 A = 1.4 V Low Saturation Voltage Symbol Test Co nditions VCES VCGR VGES VGEM TJ = 25 C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient IC25 TC = 25°C (limited by leads) IC110 TC = 110°C IF110 TC = 110°C (50N60B2D1 D iode) ICM TC = 25°C, 1 ms SSOA (RBSO A) PC TJ TJM Tstg Md Weight VGE = 15 V , TVJ = 125°C, RG = 10 Ω Clamped ind uctive load @ VCE ≤ 600 V TC = 25°C Mounting torque, TO-264 TO-264 PLUS247 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Ratings 600 V 600 V ±20 V ±3 0 V 75 A 50 A 38 A 200 A ICM = 80 A TO-264 (IXGK) G C E PLUS247 (IXGX) (T AB) G = Gate E = Emitter C E C = Coll ector Tab = Collector (TAB) 400 W -5 5 ... +150 150 -55 ... +150 °C °C ° C 1.13/10 Nm/lb.in. 10 g 6g 300 °C F eatures • Low on-state voltage IGBT a nd anti-parallel diode in one package • High current handling capability • MOS Gate tur.

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IXGX50N60A2D1 datasheet
Advance Technical Data
IGBT with Diode
IXGK 50N60A2D1
IXGX 50N60A2D1
V
I CES
VC25
CE(sat)
= 600 V
= 75 A
= 1.4 V
Low Saturation Voltage
Symbol
Test Conditions
VCES
VCGR
VGES
VGEM
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
Continuous
Transient
IC25 TC = 25°C (limited by leads)
IC110
TC = 110°C
IF110 TC = 110°C (50N60B2D1 Diode)
ICM TC = 25°C, 1 ms
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
Md
Weight
VGE = 15 V, TVJ = 125°C, RG = 10
Clamped inductive load @ VCE 600 V
TC = 25°C
Mounting torque, TO-264
TO-264
PLUS247
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
600 V
600 V
±20 V
±30 V
75 A
50 A
38 A
200 A
ICM = 80
A
TO-264
(IXGK)
G
C
E
PLUS247
(IXGX)
(TAB)
G = Gate
E = Emitter
C
E
C = Collector
Tab = Collector
(TAB)
400 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
10 g
6g
300 °C
Features
Low on-state voltage IGBT and
anti-parallel diode in one package
High current handling capability
MOS Gate turn-on for drive simplicity
Applications
Lighting controls
Heating controls
AC/DC relays
Symbol
Test Conditions
VGE(th)
ICES
IGES
VCE(sat)
IC = 250 µA, VCE = VGE
VCE = VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = 50 A, VGE = 15 V
Note 1
Characteristic Values
(TJ
=
25°C,
unless otherwise specified)
Min. Typ. Max.
3.0 5.0 V
TJ = 25°C
TJ = 125°C
600 µA
5 mA
±100 nA
TJ = 125°C
1.1 1.4
V
V
Advantages
Space savings (two devices in one
package)
Easy to mount with 1 screw or spring
clip
© 2004 IXYS All rights reserved
DS99275(12/04)

IXGX50N60A2D1 datasheet
Symbol
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ
=
25°C,
unless otherwise
Min. Typ.
specified)
Max.
IC = 40 A; VCE = 10 V,
Note 1
VCE = 25 V, VGE = 0 V, f = 1 MHz
40 55
3500
220
50
S
pF
pF
pF
IC = 40 A, VGE = 15 V, VCE = 0.5 VCES
140 nC
23 nC
44 nC
Inductive load, TJ = 25°C
IC = 50 A, VGE = 15 V
VCE = 480 V, RG = Roff = 5.0
Inductive load, TJ = 125°C
IC = 50 A, VGE = 15 V
VCE = 480 V, RG = Roff = 5.0
20 ns
25 ns
360 ns
250 ns
2.0 mJ
20 ns
25 ns
1.0 mJ
290 ns
600 ns
4.1 mJ
0.31 K/W
0.15
K/W
IXGK 50N60A2D1
IXGX 50N60A2D1
TO-264 Outline
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min. Max.
4.82 5.13
2.54 2.89
2.00 2.10
1.12 1.42
2.39 2.69
2.90 3.09
0.53 0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00 0.25
0.00
20.32
2.29
3.17
0.25
20.83
2.59
3.66
6.07 6.27
8.38 8.69
3.81 4.32
1.78 2.29
6.04 6.30
1.57 1.83
PLUS247 Outline
Inches
Min. Max.
.190 .202
.100 .114
.079 .083
.044 .056
.094 .106
.114 .122
.021 .033
1.020 1.030
.780 .786
.215 BSC
.000 .010
.000 .010
.800 .820
.090 .102
.125 .144
.239 .247
.330 .342
.150 .170
.070 .090
.238 .248
.062 .072
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ
=
25C,
unless
min.
otherwise specified)
typ. max.
VF IF = 50 A, VGE = 0 V,
Note 1
RthJC
Note 1: Pulse test, t 300 µs, duty cycle 2 %
TJ = 150°C
1.2 V
0.9 V
0.65 K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
Terminals:
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim. Millimeter
Min. Max.
A 4.83 5.21
A1 2.29 2.54
A2 1.91 2.16
b 1.14 1.40
b1 1.91 2.13
b2 2.92 3.12
C 0.61 0.80
D 20.80 21.34
E 15.75 16.13
e 5.45 BSC
L 19.81 20.32
L1 3.81 4.32
Q 5.59 6.20
R 4.32 4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478 B2




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