IXGX50N60A2D1

Advance Technical Data IGBT with Diode IXGK 50N60A2D1 IXGX 50N60A2D1 V I CES VC25 CE(sat) = 600 V = 75 A = 1.4 V Low Saturation Voltage Symbol Test Conditions VCES VCGR VGES VGEM TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient IC25 TC = 25°C (limited by leads) IC110 TC = 110°C IF110 TC = 110°C (50N60B2D1 Diode) ICM TC = 25°C, 1 ms SSOA (RBSOA) PC TJ TJM Tstg Md Weight VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ VCE ≤ 600 V TC = 25°C Mounting torque, TO-264 TO-264 PLUS247 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Ratings 600 V 600 V ±20 V ±30 V 75 A 50 A 38 A 200 A ICM = 80 A TO-264 (IXGK) G C E PLUS247 (IXGX) (TAB) G = Gate E = Emitter C E C = Collector Tab = Collector (TAB) 400 W -55 ... +150 150 -55 ... +150 °C °C °C 1.13/10 Nm/lb.in. 10 g 6g 300 °C Features Low on-state voltage IGBT and anti-parallel diode in one package High current handling capability MOS Gate turn-on for drive simplicity Applications Lighting controls Heating controls AC/DC relays Symbol Test Conditions VGE(th) ICES IGES VCE(sat) IC = 250 µA, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = 50 A, VGE = 15 V Note 1 Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 3.0 5.0 V TJ = 25°C TJ = 125°C 600 µA 5 mA ±100 nA TJ = 125°C 1.1 1.4 V V Advantages Space savings (two devices in one package) Easy to mount with 1 screw or spring...