(PDF) B1098 Datasheet PDF | SavantIC





B1098 Datasheet PDF

Part Number B1098
Description 2SB1098
Manufacture SavantIC
Total Page 3 Pages
PDF Download Download B1098 Datasheet PDF

Features: Datasheet pdf SavantIC Semiconductor Silicon PNP Power Transistors www.DataSheet4U.com DESCR IPTION ·With TO-220F package ·Complem ent to type 2SD1589 ·DARLINGTON ·High DC current gain APPLICATIONS ·Low sp eed switching industrial use ·Low freq uency power amplifier PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Product Specification 2SB1098 Fig.1 sim plified outline (TO-220F) and symbol A bsolute maximum ratings (Ta=25 ) SYMBO L PARAMETER VCBO Collector-base volt age VCEO VEBO Collector-emitter volta ge Emitter-base voltage IC Collector c urrent ICM Collector current-peak IB B ase current PC Collector dissipation Tj Junction temperature Tstg Storage te mperature CONDITIONS Open emitter Open base Open collector Ta=25 TC=25 MAX - 100 -100 -7 -5 -8 -0.5 2 20 150 -55~150 UNIT V V V A A A W SavantIC Semicond uctor Silicon PNP Power Transistors ww w.DataSheet4U.com CHARACTERISTICS Tj=2 5 unless otherwise specified SYMBOL P ARAMETER CONDITIONS VCEsat Collector-emitter saturation voltage IC=.

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B1098 datasheet
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220F package
·Complement to type 2SD1589
·DARLINGTON
·High DC current gain
APPLICATIONS
·Low speed switching industrial use
·Low frequency power amplifier
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector
Base
Product Specification
2SB1098
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
VEBO
Collector-emitter voltage
Emitter-base voltage
IC Collector current
ICM Collector current-peak
IB Base current
PC Collector dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
MAX
-100
-100
-7
-5
-8
-0.5
2
20
150
-55~150
UNIT
V
V
V
A
A
A
W

B1098 datasheet
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=-3A; IB=-3mA
VBEsat
Base-emitter saturation voltage
IC=-3A; IB=-3mA
ICBO Collector cut-off current
VCB=-100V ;IE=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-3A ; VCE=-2V
hFE-2
DC current gain
IC=-5A ; VCE=-2V
Switching times
ton Turn-on time
ts Storage time
tf Fall time
IC=-3A ;IB1=-IB2=-3mA
RL=17>;VCC=-50V;
hFE-1 Classifications
RO
Y
2000-5000 3000-7000 5000-15000
Product Specification
2SB1098
MIN TYP. MAX UNIT
-1.5 V
-2.0 V
-1 µA
-3 mA
2000
15000
500
0.5 µs
1 µs
1 µs
2





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