Ordering number:825C
PNP/NPN Epitaxial Planar Silicon Tranasistors
2SB829/2SD1065
50V/15A Switching Applications
Appli...
Ordering number:825C
PNP/
NPN Epitaxial Planar Silicon Tranasistors
2SB829/2SD1065
50V/15A Switching Applications
Applications
· Relay drivers, high-speed inverters, converters, and other general high-current switching applications.
Features
· Low-saturation collector-to-emitter voltage : VCE(sat) =–0.5V max. · Wide ASO leading to high resistance to breakdown.
Package Dimensions
unit:mm 2022A
[2SD829/2SD1065]
( ) : 2SB829
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Collector Cutoff Current Emitter Cutoff Current DC Current Gain
Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage
Symbol
Conditions
ICBO IEBO hFE1 hFE2
fT VCE(sat)
VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)1A VCE=(–)2V, IC=(–)8A
VCE=(–)5V, IC=(–)1A IC=(–)8A, IB=(–)0.4A
* : The 2SB829/2SD1065 are classified by 1A hFE as follows : 70 Q 140 100 R 200 140 S 280
1 : Base 2 : Collector 3 : Emitter
SANYO : TO-3PB
Ratings (–)60 (–)50 (–)6 (–)15 (–)20 90 150
–55 to +150
Unit V V V A A W ˚C ˚C
Ratings min typ
70* 30
20 (–0.26)
0.18
max (–)0.1 (–)0.1 280*
(–0.5) 0.4
Unit mA mA
MHz V V
Any and all SANYO products described or contained herein do not have specifications that ca...
