NCE75H21TB Datasheet PDF


Part Number

NCE75H21TB

Description

NCE N-Channel Enhancement Mode Power MOSFET

Manufacture

NCE Power

Total Page 7 Pages
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Features Datasheet pdf http://www.ncepower.com Pb Free Product NCE75H21TB NCE N-Channel Enhancement Mode Power MOSFET Description The NCE75 H21TB uses advanced trench technology a nd design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Gener al Features ● VDS = 75V,ID =210A RDS( ON) < 4.0mΩ @ VGS=10V (Typ3.3mΩ) ● Special process technology for high ESD capability ● High density cell d esign for ultra low Rdson ● Fully cha racterized avalanche voltage and curren t ● Good stability and uniformity wit h high EAS ● Excellent package for go od heat dissipation Schematic diagram Application ● Power switching applic ation ● Hard switched and high frequency circuits ● Un.
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NCE75H21TB Datasheet
http://www.ncepower.com
Pb Free Product
NCE75H21TB
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE75H21TB uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS = 75V,ID =210A
RDS(ON) < 4.0m@ VGS=10V
(Typ3.3m)
Special process technology for high ESD capability
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Schematic diagram
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% Vds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE75H21TB
NCE75H21TB
TO-247
Reel Size
-
Tape width
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Limit
75
±20
210
148
850
330
Quantity
-
Unit
V
V
A
A
A
W
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
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