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NCE75H26T Datasheet PDF

Part Number NCE75H26T
Description NCE N-Channel Enhancement Mode Power MOSFET
Manufacture NCE Power
Total Page 7 Pages
PDF Download Download NCE75H26T Datasheet PDF

Features: Datasheet pdf http://www.ncepower.com Pb Free Product NCE75H26T NCE N-Channel Enhancement M ode Power MOSFET Description The NCE75H 26T uses advanced trench technology and design to provide excellent RDS(ON) wi th low gate charge. It can be used in a utomotive applications and a wide varie ty of other applications. General Feat ures ● VDSS =75V,ID =260A RDS(ON) < 3 mΩ @ VGS=10V (Typ:2.3 mΩ) Sc hematic diagram ● Good stability and uniformity with high EAS ● Special p rocess technology for high ESD capabili ty ● High density cell design for ult ra low Rdson ● Fully characterized av alanche voltage and current ● Excelle nt package for good heat dissipation A pplication ● Automotive applications ● Hard switched and high frequency ci rcuits ● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ΔVds TESTED! TO-247 top view Package Marking and Ordering Inf ormation Device Marking Device Devic e Package NCE75H26T NCE75H26T TO-247 Reel Size - Tape width - Quantity - Absolute Max.

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NCE75H26T datasheet
http://www.ncepower.com
Pb Free Product
NCE75H26T
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE75H26T uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It can
be used in automotive applications and a wide variety of other
applications.
General Features
VDSS =75V,ID =260A
RDS(ON) < 3m@ VGS=10V Typ2.3 m
Schematic diagram
Good stability and uniformity with high EAS
Special process technology for high ESD capability
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Excellent package for good heat dissipation
Application
Automotive applications
Hard switched and high frequency circuits
Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% ΔVds TESTED!
TO-247 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE75H26T
NCE75H26T
TO-247
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
ID (100)
IDM
PD
Single pulse avalanche energy (Note 3)
EAS
Peak Diode Recovery dv/dt (Note 4)
dv/dt
Limit
75
±20
260
200
1060
385
2.57
2200
13
Unit
V
V
A
A
A
W
W/
mJ
V/ns
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0

NCE75H26T datasheet
http://www.ncepower.com
Pb Free Product
NCE75H26T
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 175
Thermal Characteristic
Thermal Resistance,Junction-to-Case (Note 1)
RθJC
0.39 /W
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
75 86
-
V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
IDSS
VDS=75V,VGS=0V
- - 1 μA
IGSS
VGS=±20V,VDS=0V
- - ±200 nA
On Characteristics
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
23
4
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=40A
- 2.3
3
m
Forward Transconductance
gFS
VDS=25V,ID=40A
260 -
-
S
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
VDS=30V,VGS=0V,
F=1.0MHz
- 15700
- 2410
-
-
PF
PF
Crss
- 1240
-
PF
Switching Characteristics
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=38V,ID=40A
VGS=10V,RGEN=1.2
(Note2)
VDS=38V,ID=160A,
VGS=10V(Note2)
- 17
- 80
- 100
- 62
- 160
- 35
- 55
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
Drain-Source Diode Characteristics
Diode Forward Voltage
VSD
VGS=0V,IS=40A
- - 1.2
V
Reverse Recovery Time
Reverse Recovery Charge
trr
TJ = 25°C, IF = 40A
- 52
-
nS
Qrr
di/dt = 100A/μs(Note2)
- 110
-
nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Surface Mounted on FR4 Board, t 10 sec.
2. Pulse Test: Pulse Width 400μs, Duty Cycle 2%.
3. EAS conditionTj=25,VDD=37.5V,VG=10V,L=2mH,Rg=25,IAS=37A
4. ISD125A, di/dt260A/μs, VDDV(BR)DSSTJ 175°C
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.0




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