NCE8580 MOSFET Datasheet

NCE8580 Datasheet, PDF, Equivalent


Part Number

NCE8580

Description

NCE N-Channel Enhancement Mode Power MOSFET

Manufacture

NCE Power

Total Page 7 Pages
Datasheet
Download NCE8580 Datasheet


NCE8580
http://www.ncepower.com
Pb Free Product
NCE8580
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE8580 uses advanced trench technology and design to
provide excellent RDS(ON) with low gate charge. This device is
suitable for use in PWM, load switching and general purpose
applications.
General Features
VDS =85V,ID =80A
RDS(ON) < 8.5m@ VGS=10V
(Typ:6.8m)
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Special designed for convertors and power controls
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Schematic diagram
Marking and pin assignment
Application
Power switching application
Hard switched and High frequency circuits
Uninterruptible power supply
100% UIS TESTED!
100% Vds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE8580
NCE8580
TO-220-3L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
Pulsed Drain Current
Maximum Power Dissipation
Peak diode recovery voltage
ID (100)
IDM
PD
dv/dt
Derating factor
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
EAS
TJ,TSTG
Limit
85
±20
80
60
320
170
15
1.13
620
-55 To 175
Unit
V
V
A
A
A
W
V/ns
W/
mJ
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.2

NCE8580
http://www.ncepower.com
Pb Free Product
NCE8580
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
0.88 /W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=85V,VGS=0V
VGS=±20V,VDS=0V
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=10V, ID=40A
VDS=25V,ID=40A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
Crss
VDS=25V,VGS=0V,
F=1.0MHz
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=30V,ID=2A,RL=15
,RG=2.5,VGS=10V
VDS=30V,ID=30A,
VGS=10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD VGS=0V,IS=40A
IS
trr Tj=25,IF=75A
di/dt=100A/μs (Note3)
Qrr
Min Typ
85 89
--
--
2 2.85
- 6.8
110 -
- 4400
- 340
- 260
- 18
- 12
- 56
- 15
- 100
- 20
- 30
--
--
-
-
Max
-
1
±100
4
8.5
-
-
-
-
-
-
-
-
-
-
-
1.2
80
36
56
Unit
V
μA
nA
V
m
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
A
nS
nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS conditionTj=25,VDD=40V,VG=10V,L=0.5mH,Rg=25
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.2


Features http://www.ncepower.com Pb Free Product NCE8580 NCE N-Channel Enhancement Mod e Power MOSFET Description The NCE8580 uses advanced trench technology and des ign to provide excellent RDS(ON) with l ow gate charge. This device is suitable for use in PWM, load switching and gen eral purpose applications. General Fea tures ● VDS =85V,ID =80A RDS(ON) < 8. 5mΩ @ VGS=10V (Typ:6.8mΩ) ● Hig h density cell design for ultra low Rds on ● Fully characterized avalanche vo ltage and current ● Special designed for convertors and power controls ● G ood stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process techno logy for high ESD capability Schematic diagram Marking and pin assignment Ap plication ● Power switching applicati on ● Hard switched and High frequency circuits ● Uninterruptible power sup ply 100% UIS TESTED! 100% ∆Vds TESTED ! TO-220-3L top view Package Marking and Ordering Information Device Marking Device Device Package NCE8580 NCE8580 TO-22.
Keywords NCE8580, datasheet, pdf, NCE Power, NCE, N-Channel, Enhancement, Mode, Power, MOSFET, CE8580, E8580, 8580, NCE858, NCE85, NCE8, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)