NCE N-Channel Enhancement Mode Power MOSFET
http://www.ncepower.com
Pb Free Product
NCE85H15
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE85H15 ...
Description
http://www.ncepower.com
Pb Free Product
NCE85H15
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE85H15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.
General Features
● VDS =85V,ID =150A RDS(ON) <4.8mΩ @ VGS=10V
(Typ:3.9mΩ)
Schematic diagram
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Special designed for convertors and power controls ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Application
● Automotive applications ● Hard switched and high frequency circuits ● Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% ΔVds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE85H15
NCE85H15
TO-220-3L
Reel Size -
Tape width -
Quantity -
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Peak diode recovery voltage
ID (100℃)
IDM PD
dv/dt
Derating factor
Limit
85 ±20 150 106 600 270 15 1.8
Unit
V V A A A W V/ns W/℃
Wuxi NCE Power Semiconductor Co., Ltd
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