NCE85H21T Datasheet PDF


Part Number

NCE85H21T

Description

NCE N-Channel Enhancement Mode Power MOSFET

Manufacture

NCE Power

Total Page 7 Pages
PDF Download
Download NCE85H21T Datasheet PDF


Features Datasheet pdf http://www.ncepower.com Pb Free Product NCE85H21T NCE N-Channel Enhancement M ode Power MOSFET Description The NCE85H 21T uses advanced trench technology and design to provide excellent RDS(ON) wi th low gate charge. It can be used in a utomotive applications and a wide varie ty of other applications. General Feat ures ● VDSS =85V,ID =210A RDS(ON) < 4 .5mΩ @ VGS=10V Schematic diagram ◠ Good stability and uniformity with hi gh EAS ● Special process technology f or high ESD capability ● High density cell design for ultra low Rdson ● Fu lly characterized avalanche voltage and current ● Excellent package for good heat dissipation Application ● Autom otive applications ● Hard switched and high frequenc.
Keywords NCE85H21T, datasheet, pdf, NCE Power, NCE, N-Channel, Enhancement, Mode, Power, MOSFET, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

NCE85H21T Datasheet
http://www.ncepower.com
Pb Free Product
NCE85H21T
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE85H21T uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It can
be used in automotive applications and a wide variety of other
applications.
General Features
● VDSS =85V,ID =210A
RDS(ON) < 4.5mΩ @ VGS=10V
Schematic diagram
● Good stability and uniformity with high EAS
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
Application
● Automotive applications
● Hard switched and high frequency circuits
● Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% ΔVds TESTED!
TO-247 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE85H21T
NCE85H21T
TO-247
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
ID (100℃)
IDM
PD
Single pulse avalanche energy (Note 3)
EAS
Peak Diode Recovery dv/dt (Note 4)
dv/dt
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
85
±20
210
150
850
330
2.2
2200
5
-55 To 175
Unit
V
V
A
A
A
W
W/℃
mJ
V/ns
℃
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)