NCE5530K

http://www.ncepower.com Pb Free Product NCE5530K NCE P-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE5530K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDS =-55V,ID =-30A RDS(ON) <40mΩ @ VGS=-10V ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Schematic diagram Application ● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply 100% UIS TESTED! Marking and pin Assignment TO-252-2L top view Package Marking And Ordering Information Device Marking Device Device Package NCE5530K NCE5530K TO-252-2L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Derating factor ID (100℃) IDM PD Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range EAS TJ,TSTG Limit -55 ±20 -30 -21 110 90 0.72 260 -55 To 150 Unit V V A A A W W/℃ mJ ℃ Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.0 http://www.ncepower.com Pb Free Product NCE5530K Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) ...