MOSFET. NCE6075 Datasheet

NCE6075 Datasheet PDF


Part

NCE6075

Description

NCE N-Channel Enhancement Mode Power MOSFET

Manufacture

NCE Power

Page 7 Pages
Datasheet
Download NCE6075 Datasheet


NCE6075 Datasheet
http://www.ncepower.com
Pb Free Product
NCE6075
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE6075 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS =60V,ID =75A
RDS(ON) < 11.5m@ VGS=10V
(Typ:9.1m)
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Schematic diagram
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% Vds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE6075
NCE6075
TO-220-3L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
60
±20
75
50
300
110
0.73
450
-55 To 175
Unit
V
V
A
A
A
W
W/
mJ
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.3

NCE6075 Datasheet
http://www.ncepower.com
Pb Free Product
NCE6075
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
1.36 /W
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=60V,VGS=0V
VGS=±20V,VDS=0V
60 68
-
--
1
- - ±100
V
μA
nA
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=10V, ID=30A
VDS=25V,ID=30A
23
- 9.1
20 -
4
11.5
-
V
m
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
VDS=25V,VGS=0V,
F=1.0MHz
- 2350
- 237
-
-
PF
PF
Crss
- 205
-
PF
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
- 16
VDD=30V,ID=2A,RL=15- 10
VGS=10V,RG=2.5
- 45
- 12
VDS=30V,ID=30A,
VGS=10V
- 50
- 12
- 16
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
VGS=0V,IS=30A
- - 1.2
V
IS
- - 75
A
trr
TJ = 25°C, IF =75A
- 28
Qrr
di/dt = 100A/μs(Note3)
- 49
nS
nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS condition: Tj=25,VDD=30V,VG=10V,L=0.5mH,Rg=25
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.3


Features Datasheet pdf http://www.ncepower.com Pb Free Product NCE6075 NCE N-Channel Enhancement Mod e Power MOSFET Description The NCE6075 uses advanced trench technology and des ign to provide excellent RDS(ON) with l ow gate charge. It can be used in a wid e variety of applications. General Fea tures ● VDS =60V,ID =75A RDS(ON) < 11 .5mΩ @ VGS=10V (Typ:9.1mΩ) ● Hi gh density cell design for ultra low Rd son ● Fully characterized avalanche v oltage and current ● Good stability a nd uniformity with high EAS ● Excelle nt package for good heat dissipation Special process technology for high E SD capability Schematic diagram Appli cation ● Power switching application ● Hard switched and high frequency ci rcuits ● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-220-3L top view Package Marking and Ordering Information Device Marking Device De vice Package NCE6075 NCE6075 TO-220- 3L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless other.
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