RU6075R

RU6075R N-Channel Advanced Power MOSFET MOSFET Features 60V/90A, RDS (ON) =5.5mΩ(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Pin Description TO-220 Applications Power Supplies N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2011 Rating 60 ±25 175 -55 to 175 ① 90 ② 360 ① 90 66 125 62.5 1.2 Unit V °C °C A A A W W °C/W 256 mJ www.ruichips.com RU6075R Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU6075R Unit Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current ④ RDS(ON) Drain-Source On-state Resistance VGS=0V, IDS=250µA VDS= 60V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±25V, VDS=0V VGS= 10V, IDS=40A 60 2 V 1 µA 30 34V ±100 n...