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Pb Free Product
NCE6050
NCE N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE6050 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
GENERAL FEATURES
● VDS =60V,ID =50A RDS(ON) <20mΩ @ VGS=10V
Schematic diagram
● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Application
● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply
Marking and pin Assignment
100% UIS TESTED!
100% ΔVds TESTED!
TO-220 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
NCE6050
NCE6050
TO-220
Reel Size -
Tape width -
Quantity -
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Derating factor
ID (100℃)
IDM PD
Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range
EAS
TJ,TSTG
Limit
60 ±20 50 35 220 80 0.53 115 -55 To 175
Unit
V V A A A W W/℃ mJ ℃
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
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http://www.ncepower.com
Pb Free Product
NCE6050
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
1.88 ℃/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
60 71
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=60V,VGS=0V
- - 1 μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
- - ±100 nA
On Characteristics (Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
1.5 -
3.0
V
Drain-Source On-State Resistance Forward Transconductance
RDS(ON) gFS
VGS=10V, ID=20A VDS=25V,ID=20A
- 17 24 -
-
mΩ S
Dynamic Characteristics (Note4)
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Clss Coss
VDS=25V,VGS=0V, F=1.0MHz
- 1200 - 104
-
PF PF
Crss
- 33
-
PF
Switching Characteristics (Note 4)
Turn-on Delay Time
td(on)
- 25
-
nS
Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time
tr td(off)
tf
VDD=30V,ID=2A,RL=15Ω - 5
VGS=10V,RG=2.5Ω
- 50
-6
-
nS nS nS
Total Gate Charge Gate-Source Charge Gate-Drain Charge
Qg Qgs Qgd
VDS=30V,ID=50A, VGS=10V
- 30 - 10 -5
nC nC nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=40A
-
1.2 V
Diode Forward Current (Note 2)
Reverse Recovery Time Reverse Recovery Charge
IS
- - 50
A
trr
TJ = 25°C, IF = 40A
- 50
-
nS
Qrr
di/dt = 100A/μs(Note3)
- 100
-
nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
N.