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NCE6050 Dataheets PDF



Part Number NCE6050
Manufacturers NCE Power
Logo NCE Power
Description NCE N-Channel Enhancement Mode Power MOSFET
Datasheet NCE6050 DatasheetNCE6050 Datasheet (PDF)

http://www.ncepower.com Pb Free Product NCE6050 NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE6050 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDS =60V,ID =50A RDS(ON) <20mΩ @ VGS=10V Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent .

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http://www.ncepower.com Pb Free Product NCE6050 NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE6050 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDS =60V,ID =50A RDS(ON) <20mΩ @ VGS=10V Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply Marking and pin Assignment 100% UIS TESTED! 100% ΔVds TESTED! TO-220 top view Package Marking And Ordering Information Device Marking Device Device Package NCE6050 NCE6050 TO-220 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Derating factor ID (100℃) IDM PD Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range EAS TJ,TSTG Limit 60 ±20 50 35 220 80 0.53 115 -55 To 175 Unit V V A A A W W/℃ mJ ℃ Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.0 http://www.ncepower.com Pb Free Product NCE6050 Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) RθJC 1.88 ℃/W Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 60 71 - V Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1.5 - 3.0 V Drain-Source On-State Resistance Forward Transconductance RDS(ON) gFS VGS=10V, ID=20A VDS=25V,ID=20A - 17 24 - - mΩ S Dynamic Characteristics (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance Clss Coss VDS=25V,VGS=0V, F=1.0MHz - 1200 - 104 - PF PF Crss - 33 - PF Switching Characteristics (Note 4) Turn-on Delay Time td(on) - 25 - nS Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time tr td(off) tf VDD=30V,ID=2A,RL=15Ω - 5 VGS=10V,RG=2.5Ω - 50 -6 - nS nS nS Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs Qgd VDS=30V,ID=50A, VGS=10V - 30 - 10 -5 nC nC nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=40A - 1.2 V Diode Forward Current (Note 2) Reverse Recovery Time Reverse Recovery Charge IS - - 50 A trr TJ = 25°C, IF = 40A - 50 - nS Qrr di/dt = 100A/μs(Note3) - 100 - nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) N.


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