NCE6050 Datasheet PDF


Part Number

NCE6050

Description

NCE N-Channel Enhancement Mode Power MOSFET

Manufacture

NCE Power

Total Page 7 Pages
PDF Download
Download NCE6050 Datasheet PDF


Features Datasheet pdf http://www.ncepower.com Pb Free Product NCE6050 NCE N-Channel Enhancement Mod e Power MOSFET DESCRIPTION The NCE6050 uses advanced trench technology and des ign to provide excellent RDS(ON) with l ow gate charge. It can be used in a wid e variety of applications. GENERAL FEA TURES ● VDS =60V,ID =50A RDS(ON) <20m Ω @ VGS=10V Schematic diagram ● H igh density cell design for ultra low R dson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excell ent package for good heat dissipation Special process technology for high ESD capability Application ● Power s witching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Su.
Keywords NCE6050, datasheet, pdf, NCE Power, NCE, N-Channel, Enhancement, Mode, Power, MOSFET, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

NCE6050 Datasheet
http://www.ncepower.com
Pb Free Product
NCE6050
NCE N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE6050 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
GENERAL FEATURES
VDS =60V,ID =50A
RDS(ON) <20m@ VGS=10V
Schematic diagram
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Application
Power switching application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
Marking and pin Assignment
100% UIS TESTED!
100% ΔVds TESTED!
TO-220 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
NCE6050
NCE6050
TO-220
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
ID (100)
IDM
PD
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
EAS
TJ,TSTG
Limit
60
±20
50
35
220
80
0.53
115
-55 To 175
Unit
V
V
A
A
A
W
W/
mJ
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)