MOSFET. NCE6020I Datasheet

NCE6020I Datasheet PDF


Part

NCE6020I

Description

NCE N-Channel Enhancement Mode Power MOSFET

Manufacture

NCE Power

Page 7 Pages
Datasheet
Download NCE6020I Datasheet


NCE6020I Datasheet
http://www.ncepower.com
Pb Free Product
NCE6020I
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE6020I uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
Genera Features
VDS =60V,ID =20A
RDS(ON) <44m@ VGS=10V
Schematic diagram
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% ΔVds TESTED!
TO-251 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE6020I
NCE6020I
TO-251
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
ID (100)
IDM
PD
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
EAS
TJ,TSTG
Limit
60
±20
20
14
45
30
0.2
72
-55 To 175
Unit
V
V
A
A
A
W
W/
mJ
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.1

NCE6020I Datasheet
http://www.ncepower.com
Pb Free Product
NCE6020I
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
5 /W
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
60 -
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=60V,VGS=0V
- - 1 μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
- - ±100 nA
On Characteristics (Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
1.2 2.0
2.5
V
Drain-Source On-State Resistance
Forward Transconductance
RDS(ON)
gFS
VGS=10V, ID=10A
VDS=5V,ID=4.5A
- 37
11 -
44
-
m
S
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
VDS=30V,VGS=0V,
F=1.0MHz
- 500
- 60
-
-
PF
PF
Crss
- 25
-
PF
Switching Characteristics (Note 4)
Turn-on Delay Time
td(on)
- 5 - nS
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
tr
td(off)
tf
VDD=30V,ID=2A,RL=6.7
VGS=10V,RG=3
- 2.6
- 16.1
- 2.3
-
-
-
nS
nS
nS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS=30V,ID=4.5A,
VGS=10V
- 14
- 2.9
- 5.2
nC
nC
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=20A
-
1.2 V
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
IS
- - 20
A
trr
TJ = 25°C, IF =20A
- 35
-
nS
Qrr
di/dt = 100A/μs(Note3)
- 53
-
nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS condition:Tj=25,VDD=30V,VG=10V,L=0.5mH,Rg=25
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.1


Features Datasheet pdf http://www.ncepower.com Pb Free Product NCE6020I NCE N-Channel Enhancement Mo de Power MOSFET Description The NCE6020 I uses advanced trench technology and d esign to provide excellent RDS(ON) with low gate charge. It can be used in a w ide variety of applications. Genera Fe atures ● VDS =60V,ID =20A RDS(ON) <44 mΩ @ VGS=10V Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excel lent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching application ● Hard switched and high frequency circuits ● Uninte rruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ΔV ds TESTED! TO-251 top view Package Ma rking and Ordering Information Device Marking Device Device Package NCE602 0I NCE6020I TO-251 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Param.
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